Ga-In-Sb specimens-In(x)Ga(1-x)Sb

Material: Ga-In-Sb specimens
Type: Micro
Method: Chemical polishing and etching
Etchant (electrolyte): Grain etch: 1 part hydrofluoric acid, 1 part nitric acid, 1 part water.
Procedure: Chemical polish: 3 parts hydrofluoric acid, 5 parts nitric acid, 3 parts ecetic acid.
Note: In(x)Ga(1-x)Sb.
Source: S.Sen, et al., Met.Trans., Vol.9A, No.3, March 1978, p.62.
















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