Gallium phosphide (GaP)-Etching (chemical polishing)

Material: Gallium phosphide (GaP)
Type: Micro
Method: Etching (chemical polishing)
Etchant (electrolyte): 0.5 m potassium hydroxide, 1.0 M potassium ferricyanide.
Procedure: Temperature: 80 C.
Note: Rate of removal for n type GaO is 115 µm/hour for (111)A, and 210 µm/hour for (100).
Source: L.R.Plauger, et al., J.Electrochem.Soc., Vol.121, No.3, March 1974, p.455.
















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