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Cu2O material-Chemical polishing
Material: Cu2O material
Method: Chemical polishing
Etchant (electrolyte): x...H3PO4. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure: Temperature: RT, rate: 1 µm/min.
Note: Cu2O material use as rectifiers in a study of etching effects on device operating parameters. Etching will reduce the forward current while a lapped surface will increase current.
Source: Makovskii, F A & Usachev, B P - Zh Tekh Fiz, 27,2786(1957).