Si (100), (111), (110) and (112) wafers-Dash etchant, modified

Material: Si (100), (111), (110) and (112) wafers
Type: Micro
Method: Dislocation etching
Etchant (electrolyte): 1 ml HF, 3 ml HNO3, 10 ml CH3COOH (HAc) (Dash etch, modified).
Procedure: Time: 4 h.
Note: Si (100), (111), (110) and (112) wafers. Solution develops dislocation pits on all orientations shown. May require additional time for best definition of pits.
Source: Perrin Walker, William H Tarn: Handbook of Metal Etchants, CRC Press, Boca Raton, Florida, USA, 1990, p.1009.














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