Si (111), n-type, 3-5 Ohm cm resistivity wafers-Chemical cleaning

Material: Si (111), n-type, 3-5 Ohm cm resistivity wafers
Type: Micro
Method: Chemical cleaning
Etchant (electrolyte): 3 parts H2SO4, 1 part H2O.
Procedure: No data.
Note: Si (111), n-type, 3-5 Ohm cm resistivity wafers used as substrates in a study of RF sputtered SiO2. Clean substrates as follows: (1) degrease with TCE, and acetone rinse; (2) etch in solution shown, and (3) final dip 1 HF:10 H2O with DI water rinse.
Source: Lee, N K - J Appl Phys, 130,658(1983).














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