Etchants for Gallium and Alloys

(Ga,Al)As-Be p-type thin films - Chemical etching
51 etchant - GaAs (111) wafer - Chemical etching
A/B etchant - GaAs (111) wafers with zinc diffusion - Chemical etching
A/B etchant - GaSb (100) wafers Te-doped - Chemical etching
AB etchant, modified - Gallium arsenide
AHA etchant - For GaAs
Abraham's AB etchant - - Gallium arsenide
Aqua regia, modified - GaP (111) wafers - Chemical etching
BRM etchant - p-GaSb (111) wafers - Chemical etching
Caro's etchant - GaAs (100) n-type wafers grown by LEC as ingots - Chemical etching
Ga (100) wafers - Chemical cleaning
Ga arsenide - Chemical polishing
Ga as a constituent in single crystal GaAs p-type wafers - Chemical etching - General microstructure
Ga as solid material - Chemical cleaning
Ga as solid material - Chemical cleaning
Ga as solid material - Chemical etching - General microstructure
Ga phosphide - Chemical polishing
Ga-As-P alloy (GaAsP) - Chemical polishing and etching
Ga-As-P specimens - (111) faces etched as cleaved - Dislocation etch in Abraham's AB etch
Ga-As-P specimens - GaAs(1-y)P(x), 0.6 >x<1
Ga-As-P system - Dislocation etching for (111)A -(111)B faces
Ga-As-P-Sb specimens - GaAs(x)Sb(y)P(1-x-y)
Ga-Au alloys - Chemical etching - General microstructure
Ga-Gd garnet - Gd3Ge4O12 - Dislocation etch
Ga-In-As phosphide - Chemical etching
Ga-In-As phosphide - Chemical polishing
Ga-In-As phosphide - Chemical polishing
Ga-In-As phosphide - Chemical polishing
Ga-In-As phosphide - Etching for pit etch
Ga-In-As phosphide - In a study of etching characteristics of InGaAsP/InP wafers
Ga-In-As phosphide - Selective etching for GaInAsP against InP
Ga-In-Sb specimens - In(x)Ga(1-x)Sb - General microstructure
Ga-Nd garnet - Nd3Ga5O12
Ga2O3 and Ga(OH)3 on GaAs, (100), p-type wafers - Chemical etching
Ga2O3 as a native oxide on gallium arsenide wafers - Chemical cleaning
Ga2O3 as native oxide on GaAs (100) wafers - Physical etching
Ga2O3 as native oxide on GaAs - Physical etching
Ga2O3 doped with iron and grown as single crystal ferrites - Chemical etching
Ga2O3 thin film growth of GaAs, (100), p-type wafers - Chemical oxidizing
GaAs (100) Si-doped wafers - Chemical cleaning
GaAs (100) Si-doped wafers - Chemical etching
GaAs (100) Te-doped wafer - Chemical cleaning
GaAs (100) Te-doped wafers - Chemical etching - General microstructure
GaAs (100) Zn-doped wafer - Chemical cleaning
GaAs (100) Zn-doped, p-type wafers - Chemical etching - General microstructure
GaAs (100) and (111) wafers - Chemical cleaning
GaAs (100) and (111) wafers - Chemical cleaning
GaAs (100) and (111) wafers - Chemical etching - General microstructure
GaAs (100) and (111) wafers - Acid oxide removal
GaAs (100) and (111) wafers doped with Se, Te, Zn, and Pd - Dislocation etching
GaAs (100) and GaAs (111) wafers - Electrolyticlytic oxidation
GaAs (100) and InSb (100) wafers - Etch cleaning
GaAs (100) ingot and wafers - Dislocation etching
GaAs (100) n+ wafers - Chemical etching - General microstructure
GaAs (100) n-type wafers - Chemical cleaning
GaAs (100) n-type wafers - Chemical etching - /polishing/cleaning
GaAs (100) n-type wafers - Chemical etching - General microstructure
GaAs (100) n-type wafers - Chemical etching - General microstructure
GaAs (100) n-type wafers - Chemical etching - General microstructure
GaAs (100) n-type wafers - Chemical polishing
GaAs (100) n-type, 0.001-0.04 Ohm cm resistivity wafers - Chemical thinning
GaAs (100) n/n +, Si-doped wafers - Chemical cleaning
GaAs (100) p-type wafers - Chemical cleaning
GaAs (100) p-type wafers - Chemical etching - General microstructure
GaAs (100) substrates - Chemical etching - General microstructure
GaAs (100) undoped wafers - GaAs (100) undoped wafers
GaAs (100) wafer Zn-doped - Chemical etching - General microstructure
GaAs (100) wafer substrates - Chemical thinning
GaAs (100) wafers - Chemical cleaning
GaAs (100) wafers - Chemical cleaning
GaAs (100) wafers - Chemical cleaning
GaAs (100) wafers - Chemical cleaning
GaAs (100) wafers - Chemical cleaning
GaAs (100) wafers - Chemical etching
GaAs (100) wafers - Chemical etching
GaAs (100) wafers - Chemical etching
GaAs (100) wafers - Chemical etching
GaAs (100) wafers - Chemical etching
GaAs (100) wafers - Chemical etching
GaAs (100) wafers - Chemical etching
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing/cleaning
GaAs (100) wafers - Chemical thinning
GaAs (100) wafers - Dislocation etching
GaAs (100) wafers - Dislocation etching
GaAs (100) wafers - Electrolyticlytic, oxidation
GaAs (100) wafers - Cemical thinning
GaAs (100) wafers - Chemical etching - General microstructure
GaAs (100) wafers - Ionized gas
GaAs (100) wafers - Lift-off
GaAs (100) wafers - Metal, replication
GaAs (100) wafers - Physical thinning
GaAs (100) wafers Be diffused - Chemical etching - General microstructure
GaAs (100) wafers Cut 2?-off plane toward (110) - Chemical cleaning
GaAs (100) wafers and other low index planes - Chemical thinning
GaAs (100) wafers and other orientations - Chemical etching - General microstructure
GaAs (100) wafers and other orientations - Chemical etching - General microstructure
GaAs (100) wafers and other orientations - Dislocation etching
GaAs (100) wafers as substrates - Chemical etching - General microstructure
GaAs (100) wafers cut within 2-3? of plane - Chemical polishing
GaAs (100) wafers cut within ?/2? of plane, Te-doped - Chemical etching - General microstructure
GaAs (100) wafers doped with germanium - Chemical etching - General microstructure
GaAs (100) wafers fabricated as Schottky barrier diodes - Chemical thinning
GaAs (100) wafers fabricated as diodes - Electrolytic polishing
GaAs (100) wafers ion implanted with Si, Zn, and Be - Chemical thinning
GaAs (100) wafers ion implanted with zinc - Chemical etching - General microstructure
GaAs (100) wafers used as substrates for Gunn diode - Chemical etching - General microstructure
GaAs (100) wafers used as substrates for LPE growth of GaAlAs - Chemical etching
GaAs (100) wafers used as substrates for MBE deposition of AlGaAs - Chemical cleaning
GaAs (100) wafers used as substrates for OMVPE growth of GaInAs and GaInP layers - Dislocation etching
GaAs (100) wafers used as substrates for deposition of AlN - Chemical cleaning
GaAs (100) wafers used for epitaxy growth of InGaAs - Chemical cleaning
GaAs (100) wafers used for zinc diffusion at 85O?C - Chemical polishing
GaAs (100) wafers used in a study of zinc diffusion - Chemical polishing
GaAs (100) wafers used in a study of zinc diffusion at 850?C - Chemical polishing
GaAs (100) wafers used to fabricate Schottky barrier diodes - Chemical polishing
GaAs (100) wafers with epitaxy grown heterostructure - Chemical etching - General microstructure
GaAs (100) wafers zinc diffused - Chemical etching
GaAs (100) wafers zinc diffused - Chemical etching - General microstructure
GaAs (100) wafers, Zn diffused - Chemical etching - General microstructure
GaAs (100), (111) and (110) wafers - Chemical etching - General microstructure
GaAs (100), (111) and (110) wafers - Chemical etching - General microstructure
GaAs (100), (111) and (110) wafers - Chemical etching - General microstructure
GaAs (100), (111), (110), (211) wafers - Chemical etching - General microstructure
GaAs (100), Te-doped, n-type wafers - Chemical cleaning
GaAs (100), and InP, (100) wafers - Chemical thinning
GaAs (100), n-type wafers - Chemical cleaning
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), n-type wafers - Chemical etching - General microstructure
GaAs (100), wafers, Si or Be doped wafers - Chemical cleaning
GaAs (110) wafers were cleaved under UHV - Vacuum cleaning
GaAs (110), (111), (100) wafers - Chemical polishing
GaAs (110), (111), and (211) wafers - Chemical etching - General microstructure
GaAs (111) and (100) wafers - Chemical etching
GaAs (111) and (100) wafers - Chemical etching - General microstructure
GaAs (111) and (100) wafers - Chemical polishing
GaAs (111) and (100) wafers - Chemical polishing
GaAs (111) as single crystal wafers and spheres - Chemical etching
GaAs (111) n-type and undoped material - Chemical polishing
GaAs (111) wafers - Chemical cleaning
GaAs (111) wafers - Chemical etching
GaAs (111) wafers - Chemical etching
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical etching - General microstructure
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers Cr, Te, and Zn doped - Chemical etching - General microstructure
GaAs (111) wafers and spheres - Chemical etching - General microstructure
GaAs (111) wafers and spheres - Chemical etching - General microstructure
GaAs (111) wafers and spheres - Chemical etching - General microstructure
GaAs (111) wafers and spheres - Chemical etching - General microstructure
GaAs (111) wafers and spheres - Chemical etching - General microstructure
GaAs (111) wafers and spheres - Chemical etching - General microstructure
GaAs (111) wafers and spheres - Chemical etching - General microstructure
GaAs (111) wafers and spheres - Chemical etching - General microstructure
GaAs (111) wafers and spheres - Chemical polishing
GaAs (111) wafers fabricated as Esaki diodes - Chemical polishing
GaAs (111) wafers used as substrates for epitaxy growth of Ge and ZnSe - Chemical etching
GaAs (111) wafers used in a polarity etching study - Chemical etching
GaAs (111) wafers used in a polarity study - Chemical etching - General microstructure
GaAs (111) wafers used in a polarity study - Chemical etching - General microstructure
GaAs (111) wafers used in a polarity study - Chemical etching - General microstructure
GaAs (111) wafers used in a polarity study of III-V compound semiconductors - Chemical etching - General microstructure
GaAs (111) wafers used in an etch development study - Chemical etching - General microstructure
GaAs (111) wafers used in an etch development study - Chemical etching - General microstructure
GaAs (111) wafers used in an etch development study - Chemical etching - General microstructure
GaAs (111) wafers with (111) Ga surface polished - Chemical polishing
GaAs (111), (100) and (110) wafers - Dislocation etching
GaAs (111), (100), and (110) wafers - Chemical etching - General microstructure
GaAs (111), n-type, 5-30 Ohm cm resistivity wafers - Chemical etching - General microstructure
GaAs (111), n-type, 5-30 Ohm cm resistivity wafers - Chemical polishing
GaAs (111)A and (TTT)B wafers - Chemical polishing
GaAs (111)A wafer - Chemical etching - General microstructure
GaAs (111)A wafer surfaces - Chemical etching - General microstructure
GaAs (111)As, (100) and (110) oriented wafers - Chemical cleaning
GaAs (111)B and (100) both n-type and undoped wafers - Chemical etching - General microstructure
GaAs (1OO), n-type wafers - Chemical etching - General microstructure
GaAs - Dislocation etching
GaAs - Etchant for revealing twin lamellae by staining (211) and etching the (211)
GaAs - Etchant for revealing twin planes
GaAs - Etchant for revealing twin planes
GaAs and GaP (100) and (111)B high n-type wafers - Chemical polishing
GaAs and GaP, etches A and B planes in GaAs - Chemical etching - General microstructure
GaAs and Si (100) wafers - Chemical etching - General microstructure
GaAs as thin film epitaxy grown on germanium substrate - Chemical etching
GaAs grown as a (111) ingot - Chemical etching - General microstructure
GaAs single crystal sphere - Chemical etching - General microstructure
GaAs single crystal spheres - Chemical etching
GaAs single crystal spheres - Chemical etching - General microstructure
GaAs specimens cut as cylinders and hemispheres - Chemical etching - General microstructure
GaAs wafers - Chemical etching - General microstructure
GaAs wafers - Chemical etching - General microstructure
GaAs wafers - Chemical etching - General microstructure
GaAs wafers - Chemical etching - General microstructure
GaAs wafers - Chemical etching - General microstructure
GaAs wafers - Chemical etching - General microstructure
GaAs wafers - Chemical etching - General microstructure
GaAs wafers - Chemical polishing
GaAs wafers - Chemical polishing
GaAs wafers grown by orizontal Bridgman (HB) technique - Chemical etching
GaAs wafers of various orientations - Chemical polishing
GaAs, (100) wafers - Chemical cleaning
GaAsB (111) n-type wafers and (100) undoped wafers - Chemical etching
GaAsBe (100) p-type wafers - Metal passivation
GaAsBe (110) p-type wafers - Chemical cleaning
GaAsCR (100)(SI) wafers - Chemical polishing/cleaning
GaAsCr (100) (SI) or n+ diffused wafers - Chemical etching - General microstructure
GaAsCr (100) (SI) wafers - Chemical cleaning
GaAsCr (100) (SI) wafers - Chemical cleaning
GaAsCr (100) (SI) wafers - Chemical cleaning
GaAsCr (100) (SI) wafers - Chemical cleaning
GaAsCr (100) (SI) wafers - Chemical cleaning/etching
GaAsCr (100) (SI) wafers - Chemical etching
GaAsCr (100) (SI) wafers - Chemical etching - /polishing
GaAsCr (100) (SI) wafers - Chemical etching - General microstructure
GaAsCr (100) (SI) wafers - Chemical etching - General microstructure
GaAsCr (100) (SI) wafers - Chemical etching - General microstructure
GaAsCr (100) (SI) wafers - Chemical polishing
GaAsCr (100) (SI) wafers - Chemical polishing
GaAsCr (100) (SI) wafers - Chemical polishing
GaAsCr (100) (SI) wafers - Chemical polishing/etching
GaAsCr (100) (SI) wafers - Etch cleaning
GaAsCr (100) (SI) wafers - Oxidation/cleaning
GaAsCr (100) (SI) wafers used as substrates for GaAs growth by MBE - Chemical cleaning
GaAsCr (100) (SI) wafers used as substrates-Oxide removal
GaAsCr (100) (SI) wafers used in a study of surface cleaning - Chemical polishing/cleaning
GaAsCr (100) wafers - Chemical cleaning
GaAsCr (100) wafers within 1/2 degrees of plane - Chemical etching - General microstructure
GaAsCr (100), (111) (SI) and n-type Si doped wafers - Molten flux
GaAsCr, (100) (SI) and InPFe (100) (SI) wafers - Molten flux
GaAsCr, (100) (SI) wafers - Halogen, polish
GaAsTe (100) n-type wafer substrates - Chemical cleaning
GaAs; Zn, (100) wafers cut 2-3?-off plane toward (110) - Chemical polishing
GaAsP wafers as highly p-type doped with Mn - Dislocation etching
GaFeO3 single crystal ingot - Acid, removal
GaN (0001) single crystal thin films - Chemical etching
GaN (0001) single crystal thin films - Electrolytic etching
GaN thin films - Chemical etching
GaN thin films grown by MBE on (0001), and (01.12) single crystals sapphire substrates to 1000 A thickness - Thermal cleaning
GaOxNy surface contamination of gallium arsenide wafers - Chemical etching
GaP (100) and (111) wafers - Chemical polishing
GaP (100) and (111) wafers - Gas polishing
GaP (100) and (111)B, p-type, 0.2 Ohm cm resistivity wafers - Chemical polishing
GaP (100) n-type wafers - Chemical polishing
GaP (100) wafers - Chemical etching
GaP (100), (111)A and (111)B wafers - Chemical polishing
GaP (110) undoped wafers - Chemical polishing
GaP (111) and (100) wafers - Chemical polishing
GaP (111) and GaAs (111) wafers - Chemical polishing
GaP (111) and GaAs (111) wafers - Chemical polishing
GaP (111) and GaAs (111)A wafers - Chemical polishing
GaP (111) wafer - Chemical polishing
GaP (111) wafers - Chemical etching
GaP (111) wafers - Chemical etching
GaP (111) wafers - Chemical etching
GaP (111) wafers - Chemical etching
GaP (111) wafers - Metal decoration
GaP (111) wafers zinc diffused - Chemical etching
GaP (111), (100), (110) wafers - Chemical polishing
GaP (111)B wafers - Chemical etching
GaP (doped with S) - Dislocation etching
GaP - Dislocation etching
GaP material used for growth of AlGaAsP single crystal ingots - Chemical cleaning
GaP polycrystalline material - Chemical cleaning
GaPO4 single crystals - Chemical ecthing
GaS (100), n-type wafers - Chemical polishing
GaS - Dislocation etching
GaSb (100) both undoped and Te-doped wafers - Acid passivating
GaSb (100) both undoped and Te-doped wafers - Acid passivation
GaSb (100) undoped and Te-doped wafers - Chemical polishing
GaSb (100) undoped wafers - Chemical polishing
GaSb (100) undoped wafers - Chemical polishing
GaSb (100) undoped wafers - Chemical polishing
GaSb (100) undoped wafers - Chemical polishing
GaSb (100) wafers - Chemical etching - General microstructure
GaSb (100) wafers - Chemical polishing
GaSb (100) wafers - Chemical, oxide removal
GaSb (100), p-type wafers - Chemical etching - General microstructure
GaSb (111) and (100) wafers - Chemical etching - General microstructure
GaSb (111) and (100) wafers - Chemical etching - General microstructure
GaSb (111) and (100) wafers - Chemical etching - General microstructure
GaSb (111) and (100) wafers - Chemical etching - General microstructure
GaSb (111) and (100) wafers - Chemical etching - General microstructure
GaSb (111) and (100) wafers - Chemical polishing
GaSb (111) wafers - Chemical etching - General microstructure
GaSb (111) wafers - Chemical etching - General microstructure
GaSb (111) wafers - Chemical etching - General microstructure
GaSb (111) wafers - Chemical etching - General microstructure
GaSb (111) wafers - Chemical etching - General microstructure
GaSb (111) wafers - Chemical etching - General microstructure
GaSb (211) wafer - Chemical etching - General microstructure
GaSe (0001) wafers - Mechanical, dislocation
GaSe - Dislocation etching
GaTe specimens - Thermal etching for etch pits
Gallium antimonide (GaSb) - Chemical etching - General microstructure
Gallium antimonide (GaSb) - Chemical etching - General microstructure
Gallium antimonide (GaSb) - Chemical etching - General microstructure
Gallium antimonide (GaSb) - Growth striations are revealed by this etchant
Gallium arsenide (GaAs polycrystalline) - Chemical etching
Gallium arsenide (GaAs) - Germanium junction - Chemical etching
Gallium arsenide (GaAs) - A study of the etching characteristics
Gallium arsenide (GaAs) - Chemical and electrolytic polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical thinning
Gallium arsenide (GaAs) - Etch for selective removal
Gallium arsenide (GaAs) - Etch pits on (111) face
Gallium arsenide (GaAs) - Etching for etch pitch
Gallium arsenide (GaAs) - Etching for etch pitch
Gallium arsenide (GaAs) - For (001) face
Gallium arsenide (GaAs) - For (001) face - Anodic etch for dislocations
Gallium arsenide (GaAs) - For differentiation from InAs stain in sodium hypochloridesoln
Gallium arsenide (GaAs) - For etch pits etching
Gallium arsenide (GaAs) - For pitch etching
Gallium arsenide (GaAs) - Polishing and chemical etching
Gallium arsenide (GaAs) - Removing the surface damage
Gallium arsenide (GaAs) - The p-n junction
Gallium arsenide (GaAs) - To distingish p-n junction
Gallium arsenide (GaAs) - To distinguish between (111) Ga - (111)
Gallium arsenide (GaAs) - Chemical etching
Gallium arsenide (GaAs) - Chemical etching
Gallium arsenide (GaAs) - Chemical etching - General microstructure
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Electrolytic etching
Gallium nitride (GaN) - Electrolytic etching
Gallium phosphide (GaP) - Chemical etching - Etching for etch pits
Gallium phosphide (GaP) - Chemical etching - General microstructure
Gallium phosphide (GaP) - Chemical etching - General microstructure
Gallium phosphide (GaP) - Chemical etching - General microstructure
Gallium phosphide (GaP) - Chemical etching - General microstructure
Gallium phosphide (GaP) - Chemical etching - General microstructure
Gallium phosphide (GaP) - Chemical polishing
Gallium phosphide (GaP) - Chemical polishing
Gallium phosphide (GaP) - Chemical polishing
Gallium phosphide (GaP) - Chemical polishing and etching
Gallium phosphide (GaP) - Chemical polishing and etching
Gallium phosphide (GaP) - Chemical polishing, chemical etching
Gallium phosphide (GaP) - Chemical thinning
Gallium phosphide (GaP) - Chemical thinning - Aqua regia
Gallium phosphide (GaP) - Etching (chemical polishing)
Gallium phosphide (GaP) single crystals - Chemical etching - General microstructure
Gallium phosphide (GaP)-Etch pits on (111)A, (111)B(100)
Gallium phosphide (GaP)-S doped n-type, Zn doped p-type
Gallium specimens - Chemical etching - General microstructure
Gallium specimens - Electrolytic polishing
Gallium sulphide (GaS) - Dislocation etching
Gallium-selenium system (Ga-Se) - Chemical etching - General microstructure
Gallium-selenium system (Ga-Se) - Etch pits etching
Gallium-selenium system (Ga-Se) - Etch pits etching
Ge (111) wafers - Chemical etching
GeAs (111) wafers - Chemical etching - General microstructure
In-Ga-As system - Preferential etch to delineate from indium phosphide
RC-1 etchant - GaAs (111) wafers - Dislocation etching
Richard-Crocker's RC etchant - Gallium phosphide (GaP) - Chemical polishing
SSA etchant - GaAs wafers - Electrolytic etching
Schell's etchant - GaAs (111) wafers - Chemical etching
n-GaP (111) and p-GaP (111) wafers - Chemical etching
p-GaP (100) wafers - Chemical etching

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