Etchants for Thin Films

(Ga,Al)As-Be p-type thin films-Chemical etching
4In2O3-1SnO2 as thin film surface coatings-Chemical etching
Ag 100 a thick thin film-Chemical etching
Ag thin film coatings on Si, Al2O3 and ZrO2 substrates-Chemical etching
Ag thin film deposits-Chemical cleaning/etching
Ag thin films electroplated on brass-Chemical etching
Ag thin films-Chemical etching
Ag thin films-Chemical etching
Ag thin films-Chemical etching
Ag-Au evaporated thin films-Chemical etching
a-Ge as thin film material deposited on NaCl (100) substrates-Float-off
a-Ge evaporated on fused quartz blanks
a-Ge thin film grown on NaCl-Acid, float-off
a-Ge thin films deposited on NaCl-Acid, float-off
a-Ge-H and a-Si-H hydrogenated thin films-Chemical cleaning/etching
AgGaS2 thin films
Al (100) wafers-Thermal etching
Al evaporated on KCl-Al, evaporated on KCl, (100) and (111) cleaved substrates as oriented thin films
Al Foil with an Al2O3 Thin Film
Al thin film on (100) silicon wafers-Chemical etching
Al thin film on quartz substrate-Gas, removal
Al thin film-Ketone, lift-off
Al thin films and crystalline aluminum sheet-Solution shown was used to etch channels in the aluminum
Al thin films deposited on GaAs-Physical etching
Al thin films deposited on silicon substrates-Physical etching
Al thin films evaporated on SiO2, Al2O3, and ZrO2 substrates-Alkali, removal
Al, and A12O3/A1N thin films-Gas etching
Al203 as (0001) or (01T2) sapphire blanks-Thermal cleaning
Al2O3 (0001) wafers-Chemical cleaning
Al2O3 and Al2PxOy thin films-Solvent, cleaning
Al2O3 single crystal spheres-Thin film coating
Al2O3 thin film deposition on InGaAsP/InP-Oxide, passivation
Al2O3 thin film-Chemical etching
Al2O3 thin film-Electrolytic etching
Al2O3 thin films DC reactively sputtered on (111) silicon wafers-Chemical etching
Al2O3, thin film deposited on silicon-Photochemical, forming
AlAs thin films-Chemical polishing
AlN on Si and GaAs substrates-Chemical etching
AlN thin film on (100) gallium arsenide-Chemical etching
AlN thin film on (111) silicon wafer-Chemical etching
AlN thin films (100) and (111)-Acid, float-off
AlN thin films deposited on GaAs-Zn doped-Chemical etching
AlN thin films-Thermal etching
Al-Ni alloy thin film-Chemical etching
Al-Ni alloy thin films-Flux etching and cleaning
Al-Ni, alloy thin film coatings-Etching
AlSi thin film layers-Physical etching
Aluminium alloys-Al alloys as sheet material and as an evaporated thin film on other materials
Aluminium thin film-Chemical etching
Aluminium thin film-Cleaning etch
Aluminium thin film-Cleaning etch
Aluminium thin film-Cleaning etch
Aluminium thin film-Reactive ion etching
Aluminium thin films deposited on GaAs and Si (100) wafers-Cleaning etch
Aluminium thin films evaporated on GaAs-Al thin films evaporated on GaAs, (100) substrates used in fabricating GaAs FETs
Aluminium thin films evaporated on silicon and Gallium arsenide-Chemical etching
Aluminium thin films on semiconductor wafers-Cleaning etch
Aluminium thin films-Chemical cleaning
a-Nb3Ge compound-Physical etching
a-Si thin film, 300 A thick-Film removal
a-Si3N4-H thin films-Ionized gas ecthing
a-SiC-H amorphous thin films 500-3500 A thick-Chemical etching
a-SiC-H amorphous thin films-Ionized gas etching
a-SiC-H thin films deposited on Si (100) substrates-Chemical etching
a-SiC-H thin films deposited on Si (100) substrates-Chemical etching
a-SiC-H thin films-Chemical etching
a-SiC-H thin films-Metal pinhole decoration
a-Si-H thin film deposited on an a-SiO(x)N(y)H thin film-Chemical etching
a-Si-H thin films grown on SiO2, Al2O3, and ZrO2 substrates-Chemical etching
a-Si-H thin films-Electrical defect
a-SiN-H thin films deposited on (100) silicon and germanium wafers-Chemical etching
a-SiO2 thin films used as a diffusion mask on silicon wafers-Thermal conversion
Au (100) single crystal thin films-Specimen preparation
Au as hard gold coatings on copper substrates-Metal plating
Au specimens and thin films-Chemical etching
Au specimens and thin films-Chemical etching-Tri-iodide etchant
Au thin film deposited by CVD-Metal diffusion
Au thin film deposited on glass-Chemical etching
Au thin film deposits as a multilayer Au/Ni/Au/TiW/Si(100) substrate-Chemical etching
Au thin film deposits on silicon wafers-Chemical etching
Au thin films and specimens-Chemical etching
Au thin films and specimens-Chemical etching
Au thin films deposited on (0001) muscovite mica substrates-Acid, float-off
Au thin films deposited on (100) NaCl substrates-Acid, float-off
Au thin films deposited on glass-Chemical etching
Au thin films deposited on soda-lime glass-Thermal, structure
Au thin films evaporated on alumina substrates-Gas, drying
Au thin films pulse plated on alumina blanks-Gold plating
Au thin films-Chemical ecthing
Au thin films-Electrolytic polishing
Au thin films-Gas, diffusion
Au thin films-Thermal etching
Au/TiW thin Films on Al film deposited on (111) silicon wafers-xgas, blister forming
Au2Ga thin films-Ionized gas thinning
Au-Cr thin films-Chemical etching
Au-Ga thin films EB evaporated on NaCl (100) substrates-Gas, aging defects
AuGa2 (100) oriented thin films on NaCl-Chemical etching
AuSn (20%) alloy as an evaporated thin film-Chemical etching
AuSn (20%) alloy as evaporated thin films-Chemical etching
AuTi thin films-Chemical thinning
a-WO3 thin films 499-8500 A thick-Chemical etching
a-Zr2Pd thin films-Chemical polishing/etching
a-Zr3Rh amorphous thin films-Chemical polishing/etching
B grown as thin films-Growth
Be thin film-Acid, removal
Be thin film-Electrolytic thinning
Be thin film-Freeze etchant
BeO specimens-Chemical etching
Beta SiC thin films grown on Si, (100) wafers-Chemical etching
Beta-SiC thin films grown on (100) silicon-Chemical cleaning
BF (100) oriented thin film-Chemical etching
Bi2O3 deposited as a thin film-Chemical etching
BN amorphous thin films-Chemical etching
BN single crystal films-Gas, crystallization
Boron nitride (BN)-Chemical etching
C (0001) specimens-Molten flux etching
C as bulk graphite or thin film deposit-Acid reduction
C as bulk graphite or thin film deposit-Chemical etching
C as thin films-Cleaning
Ca2N3 thin films-Chemical etching
CaF2 (100) cleaved wafers-Cleaning
CaF2 (100) thin films deposited on GaAs, (100) substrates-Chemical etching
Carbon specimens-Cemical cleaning
Carbon specimens-Chemical etching
Carbon specimens-Thermal, forming
Carbon-Chemical etching
CaSnF2 thin film-Chemical etching
CdP2 deposited as a thin film on InP-Chemical etching
CdS (0001) and (1013) wafers-Chemical etching
CdS (0001) wafer-Chemical ething
CdSe (0001), (1010) and (1120) wafers-Chemical etching
CdSe and (Cd,Se)xZn(1-x) single crystal thin films-Chemical etching
CdSe as a deposited polycrystalline thin film-Chemical etching
CdSe polycrystalline thin film-Chemical polishing
CdSe thin film-Chemical etching
CdSe thin film-Chemical etching
CdTe (111) wafers-Chemical polishing
CdTe single cystal ingot-Chemical cleaning
CdTe thin film-Chemical float-off
Ceramic Cr-SiO (30%)-Chemical etching
Ceramic Cr-SiO (30%)-Chemical etching
Copper thin films-Chemical etching
CoSi2 (100) wafers-Dislocation etching
CoSi2 thin film grown on substrates of Si, (111) and (100)-Chemical etching
CoSi2 thin films grown on Si substrates-Ionized gas, removal
Cr evaporated thin films-Chemical etching
Cr thin film deposits on glass substrates-Chrome etchant, modified
Cr thin films deposits-Chemical etching
Cr thin films-Chemical etching
Cr thin films-Chemical etching
Cr thin films-Chemical etching-Kodak EB-5 etchant
Cr thin films-Gas oxidation
Cr thin films-Physical etching
Cr2O3 amorphous thin films-Chemical etching
Cr2O3 thin film-Chemical etching
CrSi2 thin films deposited on silicon substrates-Gas oxidation
Cu thin films evaporated on NaCl-Acid, float-off
Cu wire and OFHC copper parts-Chemical polishing/cleaning
Cu20 thin films-Acid oxidation
Cu2O as a native oxide thin film on surfaces-Oxide removal
Cu2O thin films-Chemical cleaning
Cu-Au alloys-Electropolishing and micro
CuInTe2 thin films-Acid, float-off
CuInTe2 thin films-Chemical thinning
Cu-Ni-Fe alloy-Cathodic etching
Cu-Pd thin film-Chemical etching
D (111) oriented small parts-Detergent cleaning
Diamond
Er as an evaporated thin film-Chemical etching
ErH2 and ErH3-Acid, float-off
ErSi2 thin films grown on Si (100)-Thermal forming
Fe polycrystalline discs-Electrolytic polishing
Fe thin films deposited by MBE on GaAs, (110) wafer substrates-Chemical etching
Fe thin films deposited by MBE on GaAs, (110) wafer-Polishing
Fe2O3 thin film-Chemical etching
Fe3Ge2 as a crystalline deposit-Chemical etching
Fe3Ge3 thin films-Chemical etching
Fe-Mn-Zn pressed powder blanks-Chemical cleaning
Fe-Ni thin film-Chemical cleaning
FeO(x) as thin film-Chemical cleaning
FeO(x) thin films-Chemical etching
FePd (100) and crystalline thin films-Gas corrosion
FeWSi thin films deposited on silicon, (100) wafers-Chemical etching
Ga2O3 thin film growth of GaAs, (100), p-type wafers-Chemical oxidizing
GaAs (100) and (111) wafers-Chemical cleaning
GaAs (100) wafer substrates-Chemical thinning
GaAs (100) wafers used as substrates for OMVPE growth of GaInAs and GaInP layers-Dislocation etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100), and InP, (100) wafers-Chemical thinning
GaAs (111) wafers used as substrates for epitaxy growth of Ge and ZnSe-Chemical etching
GaAs as thin film epitaxy grown on germanium substrate-Chemical etching
GaAs, (100) wafers-Chemical cleaning
GaAs:B (111) n-type wafers and (100) undoped wafers-Chemical etching
GaAs:Cr (100) (SI) wafers-Chemical cleaning/etching
GaAs:Cr (100) (SI) wafers-Chemical cleaning
GaAs:Cr (100) (SI) wafers-Chemical cleaning
GaAs:Cr (100) (SI) wafers-Chemical cleaning
GaAs:Cr (100) (SI) wafers-Chemical polishing
GaAs:Cr (100) (SI) wafers-Oxidation/cleaning
GaN (0001) single crystal thin films-Chemical etching
GaN (0001) single crystal thin films-Electrolytic etching
GaN thin films grown by MBE on (0001), and (01.12) single crystals sapphire substrates to 1000 A thickness-Thermal cleaning
GaN thin films-Chemical etching
GaP (100) wafers-Chemical etching
GaP (100), (111)A and (111)B wafers-Chemical polishing
GaP (111) and (100) wafers-Chemical polishing
GaP (111)B wafers-Chemical etching
GaSb (100) both undoped and Te-doped wafers-Acid passivating
GaSb (100) both undoped and Te-doped wafers-Acid passivation
GaSb (100) undoped and Te-doped wafers-Chemical polishing
GaSb (100) wafers Te-doped-Chemical etching--A-B etchant
GaSb (111) and (100) wafers-Chemical polishing
Gd3Ga5O12 (110) wafers-Abrasive polishing
Gd3Ga5O12 (111) cut wafers-Chemical cleaning
Gd3Ga5O12 (111) wafers-Abrasive polishing
GdTbFe thin films-Chemical etching
Ge (100) very thin films grown by PECVD on NaCl, Ge wafers-Thermal cleaning
Ge (100) wafers cut within 1 of plane-Physical cleaning
Ge (111) n-type wafers-Electrolytic etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge and InP (100) and (111) wafers-Chemical thinning
Ge specimens-Electrolytic etching
Ge thin films evaporated on GaAs:Cr (SI) substrates-Chemical cleaning
Ge thin films evaporated on GaAs:Cr (SI) substrates-Chemical etching
Ge thin films evaporated on Si, Al, Al2O3, GaAs, C substrate-Physical etching
Ge thin films-Dislocation etching
Ge(x)Se(1-x) thin films-Chemical etching
Ge(x)Se(x-1) thin films-Chemical etching
Ge2O3, DC sputtered thin films-Chemical etching
Ge3N4 and Ge3O(1-x)N(x)-Chemical etching
Ge3N4 and Ge3OxNy thin films-Chemical etching
Ge3N4 thin films-Gas densification
GeO2 thin films-Gas forming
Glass - Microscope slides-Chemical etching
Glass-thin film deposition and growth-Chemical cleaning-AB etchant (RCA)
Hf single crystal wafers and HfN thin films-Chemical cleaning
Hf thin films deposited on silicon wafers-Chemical etching
HfN thin film-Chemical cleaning
Hg applied as a thin film-Chemical etching
HgCdTe (111) thin films-Chemical etching
HgCdTe thin films-Chemical etching
Hydrochloric acid (HCl)-Gas cleaning
i-C-Gas, growth
In2O3 (1010) deposited oriented thin film-Chemical etching
In2O3 (1010) grown as an oriented thin film-Chemical etching
In2O3 (1010) oriented thin films-Chemical etching
In2O3 as thin film-Chemical etching
InGaAs (001) thin film-Chemical etching
InGaAsP as thin film layers-Chemical etching
InGaAsP epitaxy thin films-Chemical etching
InGaAsP thin film layer grown by LPE-Chemical etching
InGaSb deposited as a thin film on BaF2 substrate (111)-Chemical thinning
InP (100) n-type wafers-Chemical etching
InP (100) tin-doped, n-type wafer-Chemical etching
InP (100) wafer-Chemical etching
InP (100) wafers with or without thin film InGaAsP epitaxy-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching-BPK-221 etchant
InP (100) wafers-Electrolytic etching
InP (100), n-type, 0.3-0.4 Ohm cm resistivity, and p-type, 7-8 Ohm cm wafers-Chemical cleaning
InSb (001) wafers-Alcohol cleaning
InSb (100) wafers-Chemical polishing
InSb (100) wafers-Ionized gas cleaning
InSb (100), (111)A and (111)B oriented wafers-Chemical etching
InSb thin films-Chemical polishing
Ir crystalline specimens as wire, rod, sheet-Chemical etching
Ir thin films deposited on silicon (100), n-type-Chemical etching
IrV and Ir80V20 thin films-Chemical etching
KCl (100) wafers-Alcohol cleaning
KCl (111) and (100) cleaved wafers-Chemical cleaning
KI (100) wafers-Chemical etching
Kr used as a gas ambient component in the RF magnetron sputter deposition of NbN thin films
Krumm's etchant
Lead sulphide (PbS)-Sample preparation
LiInS2 (001) oriented thin films-Chemical etching
LiInS2 thin films on (111) silicon wafer substrates-Chemical etching
LiN thin films-Chemical etching
Mg3N4 thin films deposited on Mg specimen blanks-Chemical etching
MgAl2O4 (spinel) (111) wafers-Chemical cleaning
MgF2 (100) wafers-Chemical polishing/etching
MgO (100) substrates-Acid, float-off
MgO (111) cleaved substrates-Ionized gas, cleaning
MgO x Al2O3 (111) blanks-Gas etching
Mica and natural rock salt-Gas cleaning
Mn steels-14% Mn steel (Hadfield steel)
Mn thin film deposits on ruthenium substrates-Chemical cleaning
Mn thin films-Chemical polishing/etching
Mo (100) specimens-Chemical polishing
Mo foil-Chemical cleaning/polishing
Mo thin films and crystalline specimens-Chemical etching
Mo thin films and crystalline specimens-Chemical etching
Mo thin films and crystalline specimens-Metal alloying
Mo thin films-Chemical etching
MoN and Mo2N thin films grown on (100) silicon wafers-Chemical etching
MoO3 thin film-Chemical etching
MoSi2 the films deposited on silicon substrates-Ionized gas etching
MoSi2 thin films deposited on silicon substrates-Ionized gas etching
MoSi2 thin films-Gas forming
Muscovite mica (0H)2KAl2(AlSi3O10)-Chemical cleaning
NaCl (100) blanks-Gas cleaning
NaCl (100) cleaved wafers-Chemical polishing
NaCl (100) cleaved wafers-Chemical polishing
NaCl (100) cleaved wafers-Thermal, float-off
NaCl (100) wafers-Acid, float-off
NaCl (100) wafers-Chemical etching
NaCl (100) wafers-Chemical polishing
NaCl (100) wafers-Gas cleaning
NaCl (100) wafers-Metal decoration
Nb thin films evaporated on glass-Gas oxidation
Nb3Ge thin films on (100) Ge substrates-Chemical etching
Nb3Ge thin films-Chemical etching
Nb3Sn amorphous thin films-Heat, removal
NbC thin films-Chemical etching
NbN (100) thin films deposited on NaCl-Ionized gas cleaning
Nb-Ti alloy (54.3 at.% Ti)-Chemical etching
Ni evaporated thin films-Chemical etching
Ni thin film evaporation on glass-Chemical etching
Ni thin films-Chemical etching
Ni2B thin film-Metal forming
NiB thin films-Ketone, cleaning
Nickel specimens-Pysical etching
Ni-Cr as an evaporated thin film on (100) oriented Si wafers-Chemical etching
Ni-Cr evaporated thin films on (100) Si wafers-Chemical etching
Ni-Cr residual metals-Chemical cleaning
Ni-Cr thin film deposition as a bimetallic layer of Au/Ni-Cr-Chemical etching
Ni-Cr thin films evaporated on (111) and (100) oriented Si-Chemical etching
NiO thin film platelets-Chemical etching
NiSi thin films deposited on silicon substrates-Ionized gas etching
NiSi2 thin films deposited on silicon wafers-Chemical cleaning
NiSi2 thin films grown on silicon substrates-Chemical etching
Np specimens-Chemical polishing/etching
NxSiO2 thin films-Chemical etching
P2Cr5 thin film-Chemical etching
P2O5 and other phosphorus compounds-Chemical etching
PbTe thin film-Acid float-off
Pd single crystals and thin films-Chemical etching
Pd thin film-Chemical cleaning
Pd thin films-Chemical cleaning
PdAu deposited as a 1:1 mixture on glass, quartz, and aapphire substrates-Chemical etching
PdSi and PdSi2 thin films grown on silicon substrates-Chemical etching
Platinum-Physical etching
Poly-Ta rod, sheet, wire-Chemical cleaning
Pt thin film-Acid, float-off
Pt thin films-Chemical etching
Pt2Si thin films formed on silicon, (111) and (100) n-type wafers-Metal deposition
PtO crystalline thin films-Chemical etching
Pt-Pd thin films-Chemical etching
PtSi thin films deposited on silicon-Ionized gas etching
PtSi thin films grown on silicon substrates-Chemical etching
Pyrex blanks-Acid float-off
ScD as thin films-Chemical etching
Se residual film left on CdSe polycrystalline thin films-Chemical etching
Se thin films-Acid, float-off
Si (100) and (111) wafers-Acid, float-off
Si (100) n-type 3-6 Ohm cm resistivity wafers-Ionized gas etching
Si (100) n-type wafers with a p+ Si epitaxy buffer layer-Chemical conditioning
Si (100) p- and n-type substrates-Chemical etching
Si (100) p-type, 4-6 Ohm cm resistivity wafers-Chemical etching
Si (100) wafers unpassivated surfaces or with SiO2 or TaSi2 thin films-Chemical cleaning
Si (100) wafers used as substrates for RF sputter of SeGe thin films-Chemical etching
Si (100) wafers used as substrates in a study of oxide and nitride-Chemical etching
Si (100) wafers used as substrates with an SiO2 thin film-Physical etching
Si (100) wafers used as substrates with p-doped and undoped poly-Si and SiO2 thin films-Ionized gas etching
Si (100) wafers used for MOCVD growth of SiO2 thin films-Chemical cleaning
Si (100) wafers with SiO2 thin films-Ionized gas etching
Si (100) wafers with thermal SiO2 thin films-Ionized gas etching
Si (100) wafers-Chemical cleaning
Si (100) wafers-Chemical etching
Si (100) wafers-Chemical thinning
Si (100), n-type, 3-6 Ohm cm resistivity wafers-Chemical etching
Si (100), n-type, 4-7 Ohm cm resistivity wafers-Chemical cleaning
Si (110) wafers with a thermally grown SiO2 thin film-Chemical etching
Si (111) and (100) wafers used as substrates for silicon MBE thin film epitaxy growth-Chemical etching
Si (111) and (100), p-type, 1-10,000 Ohm cm resistivity wafers-Chemical etching-Secco's etchant
Si (111) and (110) wafers-Chemical etching
Si (111) n-type 3-5 Ohm cm resistivily wafers-Chemical etching
Si (111) p- and n-type, 20 and 25 Ohm cm resistivity wafers-Chemical cleaning
Si (111) p-type wafers, 7-21 Ohm cm resistivity-Chemical cleaning
Si (111) wafer substrates used for epitaxy growth of GaP-Chemical cleaning
Si (111) wafers and other orientations-Chemical cleaning
Si (111) wafers and other orientations-Chemical etching-Sirtl's etchant
Si (111) wafers, 5-50 Ohm cm resistivity, n-type-Chemical polishing
Si (111) wafers-Chemical etching
Si (111), (100), n- and p-type wafers-Chemical polishing
Si and SiO(x)N(y) DC sputtered thin films on (111) silicon wafers-Chemical etching
Si as p+-n solar cells-Chemical cleaning
Si as poly-Si thin film on silicon wafers-Ionizde gas structuring
Si as poly-Si thin films-Chemical etching
Si poly-Si epitaxy deposited thin films-Chemical cleaning
Si specimens-Chemical polishing
Si substrates used for deposition of a-Si:H-Chemical etching
Si thin film deposition on germanium substrates-Chemical etching
Si thin film epitaxy grown on (100) silicon wafer substrates-Chemical cleaning
Si wafers and other orientations-Chemical polishing
Si wafers both float zone ingot material and epitaxy thin film deposit-Chemical cleaning-Chrome regia etchant
Si wafers of different orientations-Chemical etching
Si wafers-Chemical etching
Si3N4 amorphous thin films-Chemical ecthing
Si3N4 and oxynitride thin films on silicon-Chemical etching
Si3N4 and oxynitride thin films on silicon-Chemical etching
Si3N4 and oxynitride thin films-Chemical cleaning
Si3N4 and oxynitrides as DC sputtered thin film deposits on (111) silicon, n-type, 5-10 Ohm cm resistivity wafers-Chemical etching
Si3N4 and oxynitrides grown as thin films by DC sputtering on (111) silicon wafers-Chemical etching
Si3N4 and Si3NxOy thin films-Chemical etching
Si3N4 deposited as pyrolytic thin films-Chemical etching
Si3N4 oxynitrides and SiO2 DC/RF sputtered thin films-Chemical cleaning
Si3N4 oxynitrides and SiO2 thin films-Chemical cleaning
Si3N4 thin film amorphous deposits on silicon wafer substrates-Chemical etching
Si3N4 thin film amorphous deposits-Chemical etching
Si3N4 thin films deposited by CVD on (100) silicon substrates-Chemical etching
Si3N4 thin films deposited by PECVD-Chemical etching
Si3N4 thin films deposited on (100) silicon wafers-Chemical cleaning
Si3N4 thin films deposited on silicon substrates-Chemical etching
Si3N4 thin films RF plasma grown on silicon-Chemical etching
Si3N4 thin films-Chemical cleaning
Si3N4 thin films-Chemical etching
Si3N4 thin films-Chemical etching-BHF, modified etchant
Si3N4, oxynitrides and SiO2 thin films-Chemical cleaning
Si3N4, oxynitrides, SiO2 as thin films or glass and quartzware-Chemical cleaning
SiC (0001) grown as alpha-II SiC-Abrasive polishing
SiC (0001) thin films grown on (100) silicon substrates-Chemical cleaning
SiC (0001) wafers-Chemical polishing
SiC epitaxy thin films-Molten flux, dislocation
SiC thin films grown on Si (100) wafers-Gas doping
SiC thin films vapor deposited on silicon wafers-Moletn flux etching
SiC thin films-Electrolytic etching
SiN(x) and SiO2 thin films-Chemical ecthing
SiN(x) and SiO2 thin films-Ionized gas etching
SiO(x)N-H and Si-H thin films-Solvent cleaning
SiO2 and Si3N4 thin films deposited on silicon-Chemical etching
SiO2 as thermal oxidation on silicon wafers-Chemical etching
SiO2 as thin film deposits-Chemical etching
SiO2 deposited as CVD thin films on (100) silicon substrates-Chemical etching
SiO2 deposited on silicon wafer substrates
SiO2 single crystal blanks-Chemical cleaning
SiO2 single crystal blanks-Chemical cleaning
SiO2 thermally oxidized thin films on p-type (100) silicon wafers-Metal decoration
SiO2 thin film coatings-Oxide, growth
SiO2 thin film deposited on InP (100) wafer substrates-Chemical etching
SiO2 thin film deposits on silicon wafer-Chemical etching
SiO2 thin film deposits-Chemical etching
SiO2 thin film deposits-Chemical etching
SiO2 thin film deposits-Ionized gas etching
SiO2 thin film layers grown on silicon-Chemical etching
SiO2 thin film oxidation of silicon at 1200C-Chemical etching
SiO2 thin film oxidation of silicon, (111) n-type wafers at 1050C as wet oxide, 2000-2500 A thick-Chemical etching
SiO2 thin film RF sputtered
SiO2 thin film-Chemical etching
SiO2 thin films 160 nm thick-Chemical etching
SiO2 thin films and native oxides-Chemical etching
SiO2 thin films deposited by a special technique-Chemical etching
SiO2 thin films deposited by Silox system method on (100) silicon and GaAs-Cr (SI) wafers-Ionized gas etching-DE-100 etchant
SiO2 thin films deposited in etched grooves of (100) silicon wafers-Chemical etching
SiO2 thin films deposited on (100) silicon substrates-Dislocation etching
SiO2 thin films deposited on (100) silicon wafers-Chemical ecthing-Pliskin's etchant
SiO2 thin films deposited on (100) silicon wafers-Chemical etching
SiO2 thin films deposited on (100) silicon wafers-Chemical etching-P etchant
SiO2 thin films deposited on (100) silicon wafers-Ionized gas etching
SiO2 thin films deposited on (100) silicon wafers-Metal decoration
SiO2 thin films deposited on (111), p-type, 1-3 Ohm cm resistivity wafers-Chemical ecthing
SiO2 thin films deposited on (1OO) silicon wafers-Chemical etching
SiO2 thin films deposited on a variety of substrates/surfaces-Oxide, adhesive coat
SiO2 thin films deposited on silicon (100)-Chemical etching
SiO2 thin films deposited on silicon substrates-Chemical etching
SiO2 thin films deposited on silicon substrates-Chemical etching
SiO2 thin films deposited on silicon wafers
SiO2 thin films deposited on silicon wafers-Chemical etching
SiO2 thin films deposited on silicon wafers-Chemical etching
SiO2 thin films deposition on (100) silicon wafers-Oxide, growth
SiO2 thin films grown on (100) silicon wafers-Ionized gas etching
SiO2 thin films grown on silicon, (100), n-type substrates-Chemical etching
SiO2 thin films on Si (100) wafers-Chemical etching
SiO2 thin films on Si (100) wafers-Chemical etching
SiO2 thin films on silicon wafers as doped BPSG
SiO2 thin films on various substrates-Chemical cleaning
SiO2 thin films RF sputter deposited in argon on (100) oriented silicon wafers-Chemical etching
SiO2 thin films RF sputtered 200-700 nm thick on (100) silicon wafers-Chemical etching
SiO2 thin films thermally evaporated-Chemical etching
SiSn thin films deposited on (100) silicon wafers-Chemical etching
SiV2 thin films-Chemical etching/polishing
Sn electroplated thin film-Chemical etching
Sn electroplated thin film-Chemical etching
Sn shot-Chemical cleaning
SnGe (1%) thin films-Chemical etching
SnO2 thin films deposited by CVD
SnO2 thin films deposited on 1 mm glass slides-Chemical etching
SnO2 thin films deposited on SiO2 coated silicon wafer-Electrolytic etching
SnO2 thin films-Chemical etching
SnTe amorphous thin films-Chemical etching
SnTe thin films grown on muscovite mica (0001) substrates-Acid, float-off
Sr (100) wafers and other orientations-Chemical polishing/etching
SrF2 (100) thin film deposited on GaAs substrates-Chemical etching
SrF2 and Ba(x)Sr(1-x)F2 thin films and SrF2 (100) wafers-Chemical etching
Ta thin films converted to Ta2O5 and TaN-Chemical etching
Ta thin films-Chemical etching
Ta2O3 thin films-Chemical etching
Ta2O5 thin films-Gas, stabilizing
TaC, electrolytic alloy deposited thin films on different substrates-Chemical etching
TaC, electrolytic alloy deposited thin films on different substrates-Chemical etching
TaH thin films grown on (100)-Electrolytic etching
TaN thin film deposits-Chemical polishing
TaN thin films-Chemical etching
TaN thin films-Chemical etching
TaN thin films-Chemical etching
TaN thin films-Chemical etching
TaSi2 as thin films-Ionized gas etching
TaSi2 thin films 2500-2800 A-Chemical etching
TaSi2 thin films deposited on silicon (100)-Chemical cleaning
TaSi2 thin films deposited on silicon substrates-Ionized gas etching
TaSi2 thin films deposited on silicon-Ionized gas etching
TaSi2 thin films-Chemical etching
TaSi2 thin films-Chemical etching
TaW thin films-Solvent removal
TeO2 crystalline native oxide or TeO, amorphous native oxide-Salt, removal
Ti evaporated as thin films-Chemical etching
Ti sheet specimens-Chemical etching
Ti specimens and thin films-Chemical etching
Ti specimens and thin films-Chemical etching
Ti specimens and thin films-Chemical etching
Ti specimens-Chemical etching
Ti thin film deposit-Chemical etching
Ti thin film deposit-Chemical etching
Ti thin film evaporation in vacuum systems-Chemical etching
Ti thin films-Chemical etching
Ti thin films-Chemical etching
Ti thin films-Electrolytic oxidation
Ti0.3W0.7Si2 thin films-Chemical polishing
Ti2O3 specimens and thin films-Chemical etching
Ti3W7Si2 thin films on silicon wafers, (111), (110) and (100)-Chemical etching
TiC (100) thin films-Electrolytic polishing
TiD2 as thin films-Chemical etching
TiN thin films deposited on (100) silicon wafers-Chemical etching
TiN thin films deposited on poly-Si epitaxy layers-Chemical etching
TiN thin films deposited on poly-Si-Chemical etching
TiN thin films deposited on poly-Si-Ionized gas etching
TiN thin films deposited on silicon wafers-Chemical etching
TiN thin films deposited on Ti (0001) substrates-Chemical etching
TiN thin films-Chemical etching
TiO2 thin film deposited on GaAs (100) substrates-Chemical etching
TiO2 thin film deposits-Chemical etching
TiO2 thin films deposited on (111), n-type silicon substrates-Chemical etching
TiO2 thin films deposited on GaAs (100) substrates-Ionized gas cleaning
TiSi thin films grown on (100) silicon wafers-Chemical etching
TiSi2 thin film formed on silicon (100) substrates-Chemical etching
TiSi2 thin film grown on Si substrates-Chemical etching
TiSi2 thin films deposited on silicon wafers-Ionized gas etching
TiSi2 thin films grown on silicon substrates-Acid oxidation
Titanium specimens-Physical etching
Ti-TiAg-Ag thin films-Chemical etching
TiW (1% Ti) thin films-Chemical etching
TiW thin films-Chemical etching
TiW thin films-Ionized gas etching
V thin films evaporated on silicon substrates-Chemical etching
VSi2 thin films
W (111) wafers as deposited thin film-Ionized gas etching
W specimens and W thin film deposits-Chemical etching
W thin film evaporated on silicon (100) substrates-Ionized gas etching
W thin film evaporation in vacuum systems-Chemical etching
W thin films deposited by sputtering-Ionized gas entrapment
W thin films-Chemical etching
W thin films-Chemical etching
W thin films-Chemical etching
W thin films-Ionized gas etching
W2O3(PO4)2 as an amorphous glassy thin film-Chemical etching
WO(x) (x=3) thin film
WO2 oxide specimens-Chemical etching
WO3 oxide specimens-Chemical etching
WO3 thin film deposited on 2100 A SnO2 on a glass substrate-Chemical etching
WSi2 thin films grown on silicon substrates-Ionized gas etching
WSi2 thin films
WSi2 thin films-Chemical etching
Zn3P2 single crystal and thin film-Chemical etching
ZnO thin film deposit-ZnO thin film deposit formed by oxidation of ZnSe
ZnSe thin films-Chemical cleaning/polishing
ZnSnP2 thin films grown on GaAs-Chemical etching
ZnTe thin film deposits-Chemical etching
ZnTe thin films-Acid, float-off
ZnTe thin films-Chemical etching
Zr poly sheet-Chemical thinning
Zr thin film-Chemical etching
Zr2Ni single crystals-Chemical etching
ZrN thin films-Chemical cleaning
ZrO2 single crystal specimen and ZrO2 thin film-Chemical etching
ZrO2 thin film deposits-Electrolytic polishing

Copyright © 2014 by Steel Data. All Rights Reserved.