Etchants for Tungsten and Alloys

ASTM etchant No. 131 - Tungsten - Electrolytic etching
ASTM etchant No. 131 - Tungsten - Electrolytic etching
ASTM etchant No. 132a - As cast tungsten - Chemical etching
ASTM etchant No. 209 - Tungsten - Chemical etching
ASTM etchant No. 209 - W-Th
ASTM etchant No. 98c - Pure tungsten - Chemical etching
Agua regia - W specimens - Chemical etching - General microstructure
Alkaline sodium picrate etchant - W-Co eutectic alloys - Chemical etching
Alloys of WC and Co - Electrolytic etching
BRM etchant - WS2 single crystal specimens - Chemical polishing
BRM etchant - WSe2 single crystal specimens - Chemical polishing
Cemented carbides - Can be used for all compositions - Chemical etching
Ceramics, carbides - WC - General microstructure
Cermets, sintered carbides - Attack polishing
Coated cutting insert - Chemical etching - General microstructure
Hard metals - Chemical etching - General microstructure
Hardmetals - Electrolytic polishing
Mixed sintered carbides - Electrolytic etching
Murakami's etchant - W and W alloys - Chemical etching
Murakami's etchant - Tungsten - Electric contact material
Murakami's etchant - Tungsten - Mo, W and their alloys
Murakami's etchant - Tungsten-Copper (W-Cu) - Electric contact material
Murakami's etchant - Tungsten-Nickel (W-Ni) - Electric contact material
Murakami's etchant - Tungsten-rhenium-thoria system (O-Re-Th-W)-W - 3% Re-2% ThO2
Murakami's etchant - W-Hf alloys (< 3% Hf) - Chemical etching
Murakami's etchant - W-Hf-N alloys alloy - < 3% Hf, nitrided
Murakami's etchant - W-Hf-Re alloys - Chemical etching
Murakami's etchant - W-Hf-Re-N alloys alloy - < 2% Hf, < 25% Re, nitrided
Murakami's etchant - W-Mo-Hf-Re alloy - < 20% Mo, < 2% Hf, < 30% Re
Murakami's etchant - W-Mo-Hf-Re-N alloy - < 20% Mo, < 2% Hf, < 30% Re, nitrided
Murakami's etchant - WC specimens - Chemical cleaning
Murakami's etchant - WC-Co, Eta phase appears multicolored; Co is white, WC-TiC-TaC-Co, WC-NbC-Co
Murakami's etchant, modified - Tungsten - Mo, W and their alloys
Murakami's etchant, modified - W and lean alloys - Chemical etching
Pure W (tungsten) - Chemical etching - General microstructure
Refractory metals (W, V, Nb, Ta) - Chemical etching - General macrostructure
Si3N4 ceramic with TiN - Plasma etching
Sintered carbides - Chemical etching
Sintered carbides - Electrolytic polishing
Sintered carbides - General etching of sintered carbides
Sintered carbides - Particularly for sintered carbides which-apart from WC-also contain TiC, TaC and NbC
Sintered carbides - Sintered carbides containing Ni-phase
Sintered carbides - Sintered carbides with high content of Ti and Ta carbides
Sintered carbides - To reveal boundaries of the carbide grains against the cobalt phase
Steel specimens and cast irons - Chemical etching - General macrostructure
Tint etch for W - Pre-etch with grain boundary etch
Tungsetn boride - Attack polishing
Tungsten - Attack polishing
Tungsten - Attack polishing
Tungsten - Attack polishing
Tungsten - Cathodic etching
Tungsten - Chemical etching
Tungsten - Chemical etching
Tungsten - Chemical etching
Tungsten - Chemo-mechanical polishing
Tungsten - Cr, Mo, Mo-Cr alloys (up to 80% Cr)
Tungsten - Dislocation etching
Tungsten - Dislocation etching
Tungsten - Electrolytic polishing
Tungsten - Electrolytic polishing
Tungsten - Electrolytic polishing
Tungsten - Electrolytic polishing
Tungsten - Electrolytic polishing
Tungsten - Electrolytic polishing
Tungsten - Electrolytic polishing
Tungsten - Electrolytic polishing
Tungsten - Electrolytic polishing
Tungsten - Electrolytic polishing and etching
Tungsten - Electrolytic thinning
Tungsten - Electrolytic thinning
Tungsten - Electrolytic thinning by window technique
Tungsten - Electromechanical polishing
Tungsten - Eutectic W-Co alloys - General microstructure
Tungsten - For removing slip lines and twins
Tungsten - For sub grain boundaries and slip lines
Tungsten - Mo and Mo-Ni alloys, W and W alloys
Tungsten - Mo, W and their alloys - General microstructure
Tungsten - Mo, W and their alloys - General microstructure
Tungsten - Mo, W and their alloys - General microstructure
Tungsten - Tint etching
Tungsten - W and W base alloys - General microstructure
Tungsten - W and W base alloys - General microstructure
Tungsten - W and W base alloys. Mo and Mo base alloys - General microstructure
Tungsten - W and W base alloys. Ta na Ta base alloys - General microstructure
Tungsten - W-Co alloys containing 10-70% W - General microstructure
Tungsten alloys - Electrolytic polishing
Tungsten alloys - Electrolytic polishing
Tungsten and tungsten alloys - Chemical etching - General microstructure
Tungsten and tungsten alloys - Chemical etching - General microstructure
Tungsten and tungsten alloys - Chemical etching - General microstructure
Tungsten and tungsten alloys - W-Co alloys with 10-70% W
Tungsten and tungsten alloys - W-Co alloys with 10-70% W
Tungsten and tungsten alloys - W-Co alloys with eutectic compostion (cca 46% W)
Tungsten samples - Mo, W and V
Tungsten samples - Mo, W, V, Nb, Ta and their alloys
Tungsten single crystal - Electrolytic polishing
Tungsten single crystal - Electrolytic polishing, chemical polishing
Tungsten specimens - Chemical etching - General microstructure
Tungsten specimens - Chemical etching - General microstructure
Tungsten specimens - Chemical etching - General microstructure
Tungsten, color etchant - Chemical etching - General microstructure
Tungsten-2.8 vol.% ThO2 alloy - Electrolytic thinning
Tungsten-Silicon alloys (WSi2) - Chemical etching - General microstructure
Tungsten-Wire - Electrolytic polishing
W (001) wafers - Chemical etching - General microstructure
W (001) wafers and other orientations - Acid thinning
W (001) wafers and single crystals - Electrolytic polishing
W (111) wafers as deposited thin film - Ionized gas etching
W - Chemical-Mechanical polishing
W - Electrolyticlytic lapping
W and W alloys - Electrolytic polishing - Dislocation etching
W and W alloys - Electrolytic polishing - Dislocation etching
W and W alloys - Electrolytic polishing - Dislocation etching
W and W alloys - Electrolytic polishing - Dislocation etching
W and alloys - Chemical etching
W and alloys - Chemical etching
W and alloys - Chemical etching
W and alloys - Chemical etching
W and alloys - Electrolytic etching
W and alloys - Electrolytic etching
W and alloys - Electrolytic etching
W discs of pressed powder - Chemical cleaning
W single crystal wafers - Chemical etching - General microstructure
W specimens - Alcohol cleaning
W specimens - Chemical cleaning
W specimens - Chemical cleaning
W specimens - Chemical etching - General microstructure
W specimens - Chemical etching - General microstructure
W specimens - Chemical etching - General microstructure
W specimens - Chemical etching - General microstructure
W specimens - Chemical etching - General microstructure
W specimens - Chemical etching - General microstructure
W specimens - Chemical polishing
W specimens - Chmical cleaning or electrolytic polishing
W specimens - Electrolytic polishing
W specimens - Keytone cleaning
W specimens and W thin film deposits - Chemical etching - General microstructure
W specimens and parts - Chemical cleaning
W specimens as wire, W single crystal wafers - Gas, forming
W specimens used for electroplating - Chemical polishing
W specimens used for electroplating - Chemical polishing
W specimens used for electroplating - Chemical polishing
W specimens used for electroplating - Chemical polishing
W specimens used for electroplating - Chemical polishing
W thin film evaporated on silicon (100) substrates - Ionized gas etching
W thin film evaporation in vacuum systems - Chemical etching - General microstructure
W thin films - Chemical etching - General microstructure
W thin films - Chemical etching - General microstructure
W thin films - Chemical etching - General microstructure
W thin films - Ionized gas etching
W thin films deposited by sputtering - Ionized gas entrapment
W wire 0.015-0.025 diameter - Chemical cleaning
W wires and whiskers - Electrolytic polishing
W, V, Cb, and Ta alloys - Chemical etching - General macrostructure
W, V, Nb, Ta - General macrostructure
W-10% Co specimen - For electron and optical microscopy
W-3% Re alloy - Chemical etching
W-C system - Chemical etching - General microstructure
W-Co alloys - Chemical etching
W-Co alloys ith 10-70% W - Chemical etching - General microstructure
W-Hf alloys - Chemical etching
W-Mo-Os alloys - Chemical etching - General microstructure
W-Ni-Fe alloys - Electrolytic polishing
W-Re alloy (23.4% Re + 0.3% HfC) - Electrolytic thinning
W-Re alloy (25% Re) - Electrolytic polishing and chemical etching
W-Re alloy (3% Re) - Chemical etching - General microstructure
W-Re alloys (5, 25% Re) - Electrolytic polishing
W-Re alloys (9, 24% Re) - Electrolytic thinning
W-Re-Hf-C alloy - 4 at.% Re, 0.2-0.8 at.% Hf, up to 1.35 at.% C
W-Sc alloys - Chemical etching - General microstructure
W-Ta alloy (3% Ta) - Electrolytic thinning
W-Th alloys - Chemical etching
W-Th alloys - Chemical etching
W-Ti-B alloys - Chemical etching - General microstructure
W-Y alloys - Chemical etching - General microstructure
W2O3(PO4)2 as an amorphous glassy thin film - Chemical etching - General microstructure
WB2 and other tungsten borides - Chemical etching - General microstructure
WB2 and other tungsten borides - Chemical etching - General microstructure
WB2, W2B2, W2B5 - Chemical etching - General microstructure
WC - Chemical etching - General microstructure
WC - Chemical etching - General microstructure
WC - Chemical etching - General microstructure
WC single crystal specimens - Thermal etching
WC, Mo2C, TiC, or Ni in sintered carbides - Chemical etching
WC, TiC, TaC, and Co in sintered carbides - Chemical etching
WC-6% Co alloy - For revealing the microstructure of the WC-Co material
WC-Co - Chemical etching - General microstructure
WC-Co - Chemical etching - General microstructure
WC-Co - Chemical etching - General microstructure
WC-Co - Good etchant for WC crystals - Electrolytic etching
WC-Co - Suited for SEM examination - Electrolytic etching - General microstructure
WC-Co and complex sintered carbides - Chemical etching
WC-Co or Ni matrix with Mo2C, TiC, WC2, TaC - Chemical etching - General microstructure
WC-Co sintered carbides - Chemical etching
WC-Co system - Electrolytic thinning
WC-Co, WC-TiC-TaC-Co - Chemical etching - General microstructure
WC-Co, reveals Co - Electrolytic etching - General microstructure
WC-Mo2C-TiC-Ni - Chemical etching - General microstructure
WC-Mo2C-TiC-Ni cemented carbides - General microstructure
WC-Ti-Ta, NbC-Co - Physical etching - General microstructure
WC-TiC-NbC-Co - Chemical etching - General microstructure
WO(x) (x=3) thin film
WO2 oxide specimens - Chemical etching - General microstructure
WO3 oxide specimens - Chemical etching - General microstructure
WO3 thin film deposited on 2100 A SnO2 on a glass substrate - Chemical etching - General microstructure
WRh (2%) and (6%), (100) wafers - Electrolytic polishing
WSe2 single crystal specimens - Solvent cleaning
WSi2 thin films
WSi2 thin films - Chemical etching - General microstructure
WSi2 thin films grown on silicon substrates - Ionized gas etching
a-WO3 thin films 499-8500 A thick - Chemical etching - General microstructure

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