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| Chemicals | Name |
| Ace | Acetone |
| AGW | Alcohol/Glycol/Water |
| BC | Butyl Cellusolve |
| BHF | Buffered Hydrofluoric Acid |
| BRM | Bromine: Methyl Alcohol (Methanol) |
| CRY | Cryogenic (Gas) Liquid |
| LCl2 | Chlorine |
| LH | Liquid Hydrogen |
| LHe | Liquid Helium |
| LN2 | Liquid Nitrogen |
| LOX | Liquid Oxygen |
| LAR | Liquid Argon |
| Lair | Liquid Air |
| DCE | Dry Chemical Etching (ionized gas) |
| EA | Ethylene Acetate |
| ED | Ethylenediamine |
| EDP | ED:Pyrocatachol |
| EG | Ethylene Glycol |
| EOH | Ethyl Alcohol (Ethanol) |
| FG | Forming Gas (85 % N2:15 % H2) |
| Gly | Glycerin |
| HAc | (Glacial) acetic acid |
| HOAc | (Glacial) acetic acid |
| GAA | (Glacial) acetic acid |
| IPA | Isopropyl Alcohol |
| ISO | Isopropyl Alcohol |
| KEY | Ketone (ref:acetone) |
| MEK | Methyl Ethyl Ketone |
| MeOH | Methyl Alcohol (Methanol) |
| PCE | Perchloroethylene |
| Perk | Perchloroethylene |
| PG | Propylene Glycol |
| P/R | Photo Resist (Lacquer) (SH-Shipley, AZ-Horscht, COP-Similar to AZ-types, KMER-KM series no loger used, PMMA-Designet for electron litography |
| TCA | Trichloroethane |
| TCE | Trichloroethylene |
| Crystal, Physics | Name |
| G(SG) | Specific Gravity (geology) |
| g/cm3 | Density (SG) (chemistry) |
| H | Hardness (Mohs — geology), Brinell Hardness —- (metals), Knoop Hardness (metals/materials), Rockwell Hardness (metals), Shore Hardness (rubber/plastic), Vickers Hardness (metals) |
| n | Refractive Index (Isometric System) |
| bcc | body-centered cubic |
| fcc | face-centered cubic |
| hcp | hexagonal close-packed |
| tcp | tetragonal close-packed |
| alpha, beta, delta | tetragonal and other axes |
| Crystals, planes | - |
| (111)/(100) | Specific plane (Miller Indices) (xxx) parentheses |
| {110} | All planes of this type {xxx} brackets |
| <221> | Plane directions <xxx> hachures |
| (10TO) | Hexagonal System (4-axes). May be as: (10.0) |
| (TTT) | Negative over-script "T" denotes negative crystal axis. |
| Crystal Structure | Name |
| c | colloidal (c-Si) |
| a | amorphous (a-Ge) |
| c | crystalline (c-Si) |
| poly | polycrystalline (poly-Si) = crystalline |
| me | microcrystalline (mc-Si) |
| mu | microcrystalline (mu-Si) (Greek letter "mu" = µ) |
| Mc | macrocrystalline (Mc-Si) |
| i/DLC | Diamond-Like Carbon (i-C/DLC) |
| xtl | single crystal |
| sxtl | single crystal |
| bixtl | bicrystal |
| r | ribbon crystal (dendritic) |
| GB | grain boundary |
| Etching | Name |
| WCE | Wet Chemical Etching (WF=Wet Format, e.g., liquids, etc.) |
| EE | Electrolytic Etching (EF=Electrolytic Format) |
| DCE | Dry Chemical Etching (DF=Dry Format, e.g., ionized gas) |
| Process/Equipment Equipment Microscopes | Name |
| AES | Auger Electron Microscope |
| EDX | Energy Dispersive X-ray |
| ESCA | Electron Spectroscopy for Chemical Analysis |
| FIM | Field Ion Microscope |
| HEED | High Energy Electron Diffraction |
| LEED | Low Energy Electron Diffraction |
| PLM | Polarized Infrared Microscope |
| SAM | Scanning Auger Microscope |
| SIMS | Secondary Ion-Mass Spectroscopy |
| SLAM | Scanning Laser Acoustic |
| UPS | Ultraviolet Photo-Electron Spectroscopy |
| XPA | X-ray Photo-Electron Spectroscopy |
| SEM | Scanning Electron Microscope |
| TEM | Transmission Electron Microscope |
| Chemical Vapor Deposition | Name |
| CVD | Chemical Vapor Deposition |
| APCVD | Atmospheric Pressure CVD |
| HOMOCVD | Homogeneous CVD |
| HPCVD | High Pressure CVD |
| LPOMCVD | Low Pressure OMCVD |
| OMCVD | Organo-metallic CVD |
| PECVD | Plasma Enhanced CVD |
| VHPCVD | Very High Pressure CVD |
| HMCVD | Horizontal Magnetic CVD |
| VMCVD | Vertical Magnetic CVD |
| Epitaxy Growth (Epi) | Name |
| HEP | Horizontal Epitaxy |
| HPE | Horizontal Phase Epitaxy |
| HWE | Hot-Wall Epitaxy |
| LPE | Liquid Phase Epitaxy |
| CCLPE | Current Controlled LPE |
| L-SPE | Lateral Solid Phase Epi |
| VEP | Vertical Epitaxy |
| VPE | Vapor Phase Epitaxy |
| V-SPE | Vertical Solid Phase Epi |
| MBE | Molecular Beam Epitaxy |
| Growth Systems, general | Name |
| CZ | Czochralski (pulled xtl) |
| FZ | Float Zone (solid xtl) |
| BM | Bridgman Method |
| **HB | Horizontal Bridgman |
| VB | Vertical Bridgman |
| EFG | Edge Defined Film Fed Growth (ribbon xtl) + other acronyms by developers |
| VM | Verneiul Method (hot droplet) |
| LEVCZ | Levitation CZ (development for space application) |
| LEC | Liquid Encapsulated CZ |
| MFG(FS) | Molten Flux Growth or Fused Salt (Note: xtls may be contaminated by flux) |
| HEM | Heater Enhance Method (poly CZ type) |
| Vapor Transport Deposition | Name |
| VT | Vapor Transport |
| CSVT | Close-Spaced VT |
| Element Doping/Deposition | Name |
| ALY | Alloy into material (Al into silicon is Square Law) |
| DIF | Diffuse element into material (B, Sb, As, etc., is Gaussian Diffusion Law). |
| I2 | Ion implantation (Si+ ionized particle at eV/MeV energy levels, also, Gaussian). |
| EVAP/M | Metal evaporation + thermal |
| DEC/M | Drive-in (also used to metal decorate defects/decoration) |
| EVAP/Ox | Oxide deposit with doping element as glass (ASG, BSG, PSG, BPSG, etc., and may be a nitride as final coat or for thermal drive-in) |
| SSDIF | Solid-Solid Diffusion (may be Solid Phase Epi, SPE) |
| CONV | Evaporate metal + thermal conversion, e.g., Silicides. (MoSi, MO2Si, MoSi2, etc.) |
| OX | Oxidation (Wet, Dry, Steam or SILOX System). Also electrolytic. |
| W/Mo | Std light filaments, white |
| SILOX | Oxidation from SiH4:O2/N2 300—500 oC |
| RF/DC | RF/DC Plasma deposition of oxides, nitrides, metals and compounds under vacuum |
| V-MET | Metal(s) evaporation under vacuum (metallization). With RF/DC Plasma as metallization or thin film compound deposition |
| RF-MAG | RF magnetron deposition. Magnet enhances deposition rate/opn |
| EB/E-Beam | Election Beam metallization (260oC bent beam now common) |
| PD | Pyrolitic Deposition {See: CVD) |
| Etching Systems/Methods | Name |
| IM | Ion Milling (pattern ion gas etch of thin films) |
| EBL | Electron Beam Lithography (ref: P/R with PMMA) |
| MFE | Molten Flux Etching |
| PE | Plasma Etching |
| PL | Photolithography |
| RIE | Reactive Ion Etching |
| IE | Ion Etching (nonreactive) |
| PR | Photo Resist |
| Water, H2O | Name |
| Recire | Recirculating water |
| DI | Distilled |
| dd) | double distilled (2d) (2DI |
| ddd | triple distilled (3d) (3DI) |
| Hi-Q | DI + ion exchange |
| HQ | High Quality |
| dm | Demineralized |
| di | Deionized |
| Others | Name |
| RT | Room temperature (20-25 oC) |
| IR | Infrared light (below VL) |
| UV | Ultaviolet light (above VL) |
| VL | Visible light spectrum, white |
| D.C. (d.c.) | Direct Current Circuits |
| A.C. (a.c.) | Alternating Current Circuits |
| CD | Current Density (A/cm2, A/mm2, ...) |