Etchants for Wafers

(Ga,Al)As-Be p-type thin films-Chemical etching
(Y2O3)m(ZrO2)(1-m) (100) wafers-Chemical polishing
4FeO.2Fe2O3.2Si02.4H2O, (001) cleaved wafers-Dislocation etching
79Ni-17Fe-44Mo (111) oriented Permalloy wafers-Electrolytic polishing
Ag (001) wafers-Chemical polishing
Ag (001) wafers-Dislocation etching
Ag (001) wafers-Electrolytic sawing
Ag (111) and (100) wafers-Chemical polishing
Ag (111) wafers, Ag Natural Crystals, Ag Native single crystals
Ag specimens used in a thermal etching study-Electrolytic polishing
Ag specimens used in a thermal etching study-Gas etching
Ag2Al (0001) wafers-Dislocation etching
Ag2Al (0001) wafers-Dislocation etching
Ag2Se (100) wafers and other orientations-Chemical polishing
Ag2Se (100) wafers and other orientations-Chemical polishing
Ag2Se (100) wafers-Chemical polishing
Ag2Te (100) wafers-Chemical polishing
Ag-Au evaporated thin films-Chemical etching
AgBr (100) and (111) wafers-Dislocation etching
AgBr (110) wafers-Abrasive polishing
AgCl (100) wafers-Chemical cleaning
AgCl (100) wafers-Chemical cleaning
AgCl (100) wafers-Chemical polishing
AgCl single crystal oriented bars-Chemical cleaning
Al (001) wafers-Al (001) wafers and other orientations
Al (001) wafers-Al, (001) wafers used in a study of lithium precipitation along dislocations
Al (001) wafers-Dislocation etching
Al (100) wafer-Al, (100) wafer surfaces preferentially etched in this solution
Al (100) wafers used in an oxidation study-Electrolytic polishing
Al (100) wafers-Thermal etching
Al single crystal sphere-Gas oxidation
Al single crystal wafers-Electrolytic thinning
Al thin film on (100) silicon wafers-Chemical etching
Al thin films deposited on GaAs-Physical etching
Al, and A12O3/A1N thin films-Gas etching
Al2O3 (0001) wafers-Chemical cleaning
Al2O3 (0001) wafers-Chemical etching
Al2O3 (0001) wafers-Metal etching
Al2O3 and Al2PxOy thin films-Solvent, cleaning
Al2O3 clear fused sapphire blanks and (0001) single crystal oriented blanks-Chemical cleaning
Al2O3 thin film-Chemical etching
Al2O3 thin films DC reactively sputtered on (111) silicon wafers-Chemical etching
Al2O3, thin film deposited on silicon-Photochemical, forming
Al2O3-Zr (1%) doped single crystal-Physical etching
Al-Ag polycrystalline and single crystal ingots-Chemical etching
Al-Ag polycrystalline and single crystal ingots-Chemical etching
AlAs (110) wafers-Gas, oxidation
Al-Au alloy-Chemical etching
AlGaAs (100) wafer-Chemical cleaning
AlN thin film on (111) silicon wafer-Chemical etching
AlN thin films deposited on GaAs-Zn doped-Chemical etching
AlP single crystal wafer-Chemical polishing
Alpha-Al2O3 (0001) wafers-Chemical etching
Alpha-SiC (0001) wafers-Dislocation etching
Alpha-SiC (0001) wafers-Gas polishing
AlSb (111) wafers-Chemical etching
AlSb wafers-Chemical etching
AlSb wafers-Chemical etching
AlSb wafers-Chemical polishing
AlSb wafers-Chemical polishing
AlSb wafers-Chemical polishing
AlSb/GaSb wafers-Chemical etching
Al-Si (5%) foil-Chemical cleaning
AlSi (5%) spheres-Gas, cleaning
Al-Si alloy-Chemical etching
Alum, KAl(SO4)2 x 12H2O (111) wafers-Chemical etching
Aluminium single crystal specimens-Chemical polishing
Aluminium thin films deposited on GaAs and Si (100) wafers-Cleaning etch
Aluminium thin films evaporated on silicon and Gallium arsenide-Chemical etching
Aluminium thin films on semiconductor wafers-Cleaning etch
Aluminum antimonide (AlSb)-Chemical polishing
Aluminum antimonide (AlSb)-Chemical polishing
As (0001) cleaved specimens-Chemical polishing
As (0001) wafers-Solution used as a general removal etch
As (111) specimens-Dislocation etching
a-SiC-H amorphous thin films 500-3500 A thick-Chemical etching
a-SiC-H amorphous thin films-Ionized gas etching
a-SiC-H thin films-Chemical etching
a-SiC-H thin films-Metal pinhole decoration
a-SiN-H thin films deposited on (100) silicon and germanium wafers-Chemical etching
a-SiO2 thin films used as a diffusion mask on silicon wafers-Thermal conversion
Au (111) wafers and other orientations-Chemical etching
Au diffused into silicon wafers-Chemical etching
Au specimens and thin films-Chemical etching
Au thin film deposits on silicon wafers-Chemical etching
Au/TiW thin Films on Al film deposited on (111) silicon wafers-xgas, blister forming
Au2Ga thin films-Ionized gas thinning
AuGe (13%) alloy as Au/AuGe/Ni evaporated multilayered films-Chemical etching
AuGe (13%) alloy as pellets, sheets-Chemical etching
AuSn (20%) alloy ribbon-Chemical etching
AuTi thin films-Chemical thinning
B2Te3 single crystal-Chemical etching
Ba2TiO3 (111) and (100) wafers, single crystals-Chemical etching-Iodine A etchant
Ba2TiO3 specimens-Chemical polishing
BaF2 (111) wafers-Acid, float-off
BaF2 (111) wafers-Chemical polishing
BaF2 (111) wafers-Chemical polishing
BaF3 (111) wafers-Chemical etching
Be (001), (100), and (110) wafers-Electrolytic polishing
Be thin film-Acid, removal
Be-Ce alloy-Chemical cleaning
Be-Cu specimens-Chemical etching
BeO (0001) single crystal wafers-Chemical ecthing
BeO (0001) wafer-Chemical etching
BeO (0001) wafer-Chemical etching
BeO (0001) wafer-Chemical etching
BeO (0001) wafer-Chemical etching
BeO (0001) wafers and pressed powder substrates-Chemical etching
BeO specimens-Chemical etching
Beta SiC thin films grown on Si, (100) wafers-Chemical etching
Beta-SiC (0001) wafers-Molten flux etching
Beta-SiC thin films grown on (100) silicon-Chemical cleaning
Bi (0001) wafers-Chemical etching
Bi (0001) wafers-Chemical polishing
Bi2Se3 (0001) cleaved wafers-Electrolytic, oxidizing
Bi2Se3 (0001) wafers-Chemical cleaning
Bi2Se3 (0001) wafers-Chemical polishing
Bi2Te3 (0001) wafers-Chemical ecthing
Bi2Te3 (0001) wafers-Chemical etching
Bi2Te3 (0001) wafers-Chemical etching
Bi2Te3 (0001) wafers-Chemical etching
BiSb single crystals Te doped-Dislocation etching
BN as pressed powder test blanks-Chemical etching
BN single crystal films-Gas, crystallization
Boron nitride (BN)-Chemical etching
Boron specimens-Chemical etching
BP single crystal wafers-Electrolytic etching
Brass, as single crystal alpha-brass-Electrolytic polishing
BSG as borosilicate glass on silicon-Metal diffusion
C4F8 (octofluorocyclobutane)
Ca2B6O11 x 5H2O (010) cleaved wafers-Chemical etching
Ca5(PO4)1F-Nd single crystals-Chemical etching
Ca5(PO4)3F-Physical polishing
CaCO3 (1011) cleaved wafers-Dislocation etching
CaCO3 (10l1) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Acid cleaning
CaCO3 r(1011) cleaved wafers-Acid cleaning-EDTA etchant
CaCO3 r(1011) cleaved wafers-Dislocatiin etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3 r(1011) cleaved wafers-Dislocation etching
CaCO3-Chemical polishing
CaF2 (100) cleaved wafers-Cleaning
CaF2 (100) thin films deposited on GaAs, (100) substrates-Chemical etching
CaF2 (111) cleaved wafers-Chemical etching
CaF2 (111) cleaved wafers-Dislocation etching
CaF2 (111) wafers-Chemical etching
CaW04 (100) wafers-Chemical etching
CaWO4 (001) wafers-Chemical etching
CaWO4 (001) wafers-Chemical etching
CaWO4 (001) wafers-Chemical etching
Cd (111) and (100) single crystal wafers-Chemical polishing
Cd dislocation free single crystals-Mechnical, defect
Cd single crystal wafer-Mechanical, orientation
CdI2 (0001) wafers-Chemical polishing
CdIn2Te4 wafers-Chemical polishing
CdP2 deposited as a thin film on InP-Chemical etching
CdS (0001) and (1010) wafers-Chemical etching
CdS (0001) and (1013) wafers-Chemical etching
CdS (0001) wafer-Chemical etching
CdS (0001) wafer-Chemical etching
CdS (0001) wafer-Chemical ething
CdS (0001) wafer-Chemical/mechanical polishing
CdS (0001) wafers and CdSe (1010) cleaved wafer-Light, reactive
CdS (0001) wafers-Chemical cleaning
CdS (0001) wafers-Chemical cleaning
CdS (0001) wafers-Chemical etching
CdS (0001) wafers-Chemical etching
CdS (0001) wafers-Chemical etching
CdS (100) wafer-Chemical polishing
CdS (100) wafers-Chemical etching
CdS (1010) wafers-Chemical etching
CdS (1010) wafers-Chemical etching
CdS (111) wafer-Chemical etching
CdS (111) wafers-Chemical polishing
CdS (111) wafers-Chemical polishing
CdS wafers copper plated-Chemical etching
CdSb (100) wafer-Chemical polishing
CdSe (0001) or (1120) wafers-Chemical etching
CdSe (0001) wafers-Chemical etching
CdSe (0001) wafers-Chemical etching
CdSe (0001) wafers-Chemical etching
CdSe (0001) wafers-Chemical etching
CdSe (0001), (1010) and (1120) wafers-Chemical etching
CdSe (1010) cleaved wafers-Light, reactive
CdSe(120) n-type wafers-Chemical etching
CdSiAs2 (001) and (111) wafers-Chemical etching
CdTe (100) wafers-Chemical polishing
CdTe (100), (111) and (110) wafers-Chemical etching-EAg1 etchant
CdTe (100), (111), and (110) wafers-Chemical etching
CdTe (100), (111), and (110) wafers-Chemical etching-EAg2 etchant
CdTe (111) n-type wafers-Chemical polishing
CdTe (111) wafers and ingots-Chemical etching
CdTe (111) wafers-Acid, burn
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical etching
CdTe (111) wafers-Chemical polishing
CdTe (111) wafers-Chemical polishing
CdTe (111) wafers-Chemical polishing
CdTe (111) wafers-Chemical polishing
CdTe (111) wafers-Chemical polishing
CdTe (111) wafers-Chemical polishing
CdTe (111) wafers-Chemical polishing
CdTe (111) wafers-Dislocation etching
CdTe (111), (100) and (110) wafers-Chemical etching
CdTe (111), (100), and (110) wafers-Chemical etching-PBr etchant
CdTe (111), (100), and (110) wafers-Thermal etching
CdTe (111)-Electrolytic oxidation
Chlorine-Electrolytic, gas jet
Co (0001) wafers-Co (0001) wafers and other orientations used in a structure study
Co (0001) wafers-Electrolytic polishing
Co (0001) wafers-Electrolytic polishing
CO2 as solid "Dry Ice"-Alcohol, chilling
CoFeO (100) wafers-Chemical etching
CoO (100) wafers-Chemical etching
CoO (100) wafers-Gas oxidation
CoO (100) wafers-Thermal processing
CoSi2 (100) wafers-Dislocation etching
Cr thin films-Chemical etching-Kodak EB-5 etchant
Cr2O3 (0001) and (1011) wafers-Chemical etching
Cr2O3 (0001) wafers-Chemical etching
Cs2O (111) wafers-Chemical cleaning
CsBr (001) wafers-Alcohol polishing
CsI (100) oriented single crystal wafers-Chemical polishing/etching
Cu (100) wafers-Chemical polishing
Cu (111) single crystal wafers-Dislocation etching
Cu (111) wafers-Chemical etching
Cu (111) wafers-Electrolytic polishing
Cu (111) wafers-Gas cleaning
Cu (1O0) single crystal wafers-Gas removal
Cu single crystal specimens-Chemical etching
Cu single crystal spheres-Electrolytic polishing
Cu single crystal spheres-Gas, preferential
Cu single crystal wafers of various orientations-Dislocation etching
Cu single crystal wafers-Chemical etching
Cu single crystal wafers-Chemical etching
Cu single crystal wafers-Dislocation etching
Cu-Be spring shim stock-Chemical cleaning
CuInS2 (112) wafers-Dislocation etching
CuInS2 (112) wafers-Dislocation etching
CuInS2 (112) wafers-Dislocation etching
CuInS2 n-type wafers-Chemical polishing
CuInS2 n-type wafers-Photo etch-polishing
CuInS2 wafer-Chemical polishing
CuInS2 wafers-Chemical etching
CuInSe2 p-type wafers-Chemical cleaning
CuInSe2 single crystal-Chemical polishing/staining
CuInSe2 wafers-Chemical etching
D (100), (111), and (110) oriented wafers-Physical etching
D (111) wafers-Chemical cleaning
D (111) wafers-Ionized gas
D (111) wafers-Metal, implatantion
Er as an evaporated thin film-Chemical etching
ErSi2 thin films grown on Si (100)-Thermal forming
Fe (100) wafers and other orientations-Chemical etching
Fe (100) wafers used in a magnetics study-Chemical etching
Fe (100) wafers-Chemical etching
Fe (100) wafers-Dislocation etching
Fe as flat soft iron lap platens-Chemical cleaning
Fe thin films deposited by MBE on GaAs, (110) wafer substrates-Chemical etching
Fe thin films deposited by MBE on GaAs, (110) wafer-Polishing
Fe3Ge2 as a crystalline deposit-Chemical etching
Fe3Ge3 thin films-Chemical etching
FeGe2 (100) and (110) wafers-Chemical etching
FeGe2 (100) and (110) wafers-Chemical etching
FeSi (7.7%) single crystal (100)-Thermal de-stress
FeWSi thin films deposited on silicon, (100) wafers-Chemical etching
Ga (100) wafers-Chemical cleaning
Ga as a constituent in single crystal GaAs p-type wafers-Chemical etching
Ga2O3 and Ga(OH)3 on GaAs, (100), p-type wafers-Chemical etching
Ga2O3 as a native oxide on gallium arsenide wafers-Chemical cleaning
Ga2O3 as native oxide on GaAs (100) wafers-Physical etching
Ga2O3 as native oxide on GaAs-Physical etching
Ga2O3 thin film growth of GaAs, (100), p-type wafers-Chemical oxidizing
GaAs (100) and (111) wafers doped with Se, Te, Zn, and Pd-Dislocation etching
GaAs (100) and (111) wafers-Acid oxide removal
GaAs (100) and (111) wafers-Chemical cleaning
GaAs (100) and (111) wafers-Chemical cleaning
GaAs (100) and (111) wafers-Chemical etching
GaAs (100) and GaAs (111) wafers-Electrolytic oxidation
GaAs (100) and InSb (100) wafers-Etch cleaning
GaAs (100) ingot and wafers-Dislocation etching
GaAs (100) n/n +, Si-doped wafers-Chemical cleaning
GaAs (100) n+ wafers-Chemical etching
GaAs (100) n-type wafers grown by LEC as ingots-Chemical etching-Caro's etchant
GaAs (100) n-type wafers-Chemical cleaning
GaAs (100) n-type wafers-Chemical etching/polishing/cleaning
GaAs (100) n-type wafers-Chemical etching
GaAs (100) n-type wafers-Chemical etching
GaAs (100) n-type wafers-Chemical etching
GaAs (100) n-type wafers-Chemical polishing
GaAs (100) n-type, 0.001-0.04 Ohm cm resistivity wafers-Chemical thinning
GaAs (100) p-type wafers-Chemical cleaning
GaAs (100) p-type wafers-Chemical etching
GaAs (100) Si-doped wafers-Chemical cleaning
GaAs (100) Si-doped wafers-Chemical etching
GaAs (100) Te-doped wafer-Chemical cleaning
GaAs (100) Te-doped wafers-Chemical etching
GaAs (100) undoped wafers-GaAs (100) undoped wafers
GaAs (100) wafer substrates-Chemical thinning
GaAs (100) wafer Zn-doped-Chemical etching
GaAs (100) wafers and other low index planes-Chemical thinning
GaAs (100) wafers and other orientations-Chemical etching
GaAs (100) wafers and other orientations-Chemical etching
GaAs (100) wafers and other orientations-Dislocation etching
GaAs (100) wafers as substrates-Chemical etching
GaAs (100) wafers Be diffused-Chemical etching
GaAs (100) wafers Cut 2-off plane toward (110)-Chemical cleaning
GaAs (100) wafers cut within /2 of plane, Te-doped-Chemical etching
GaAs (100) wafers cut within 2-3 of plane-Chemical polishing
GaAs (100) wafers doped with germanium-Chemical etching
GaAs (100) wafers fabricated as diodes-Electrolytic polishing
GaAs (100) wafers fabricated as Schottky barrier diodes-Chemical thinning
GaAs (100) wafers ion implanted with Si, Zn, and Be-Chemical thinning
GaAs (100) wafers ion implanted with zinc-Chemical etching
GaAs (100) wafers used as substrates for deposition of AlN-Chemical cleaning
GaAs (100) wafers Used as substrates for Gunn diode-Chemical etching
GaAs (100) wafers used as substrates for LPE growth of GaAlAs-Chemical etching
GaAs (100) wafers used as substrates for MBE deposition of AlGaAs-Chemical cleaning
GaAs (100) wafers used as substrates for OMVPE growth of GaInAs and GaInP layers-Dislocation etching
GaAs (100) wafers used for epitaxy growth of InGaAs-Chemical cleaning
GaAs (100) wafers used for zinc diffusion at 85OC-Chemical polishing
GaAs (100) wafers used in a study of zinc diffusion at 850C-Chemical polishing
GaAs (100) wafers used in a study of zinc diffusion-Chemical polishing
GaAs (100) wafers used to fabricate Schottky barrier diodes-Chemical polishing
GaAs (100) wafers with epitaxy grown heterostructure-Chemical etching
GaAs (100) wafers zinc diffused-Chemical etching
GaAs (100) wafers zinc diffused-Chemical etching
GaAs (100) wafers, Zn diffused-Chemical etching
GaAs (100) wafers-Cemical thinning
GaAs (100) wafers-Chemical cleaning
GaAs (100) wafers-Chemical cleaning
GaAs (100) wafers-Chemical cleaning
GaAs (100) wafers-Chemical cleaning
GaAs (100) wafers-Chemical cleaning
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical etching
GaAs (100) wafers-Chemical polishing/cleaning
GaAs (100) wafers-Chemical polishing
GaAs (100) wafers-Chemical polishing
GaAs (100) wafers-Chemical polishing
GaAs (100) wafers-Chemical polishing
GaAs (100) wafers-Chemical polishing
GaAs (100) wafers-Chemical thinning
GaAs (100) wafers-Dislocation etching
GaAs (100) wafers-Dislocation etching
GaAs (100) wafers-Electrolytic, oxidation
GaAs (100) wafers-Ionized gas
GaAs (100) wafers-Lift-off
GaAs (100) wafers-Metal, replication
GaAs (100) wafers-Physical thinning
GaAs (100) Zn-doped, p-type wafers-Chemical etching
GaAs (100) Zn-doped-Chemical cleaning
GaAs (100), (111) and (110) wafers-Chemical etching
GaAs (100), (111) and (110) wafers-Chemical etching
GaAs (100), (111) and (110) wafers-Chemical etching
GaAs (100), (111), (110), (211) wafers-Chemical etching
GaAs (100), and InP, (100) wafers-Chemical thinning
GaAs (100), n-type wafers-Chemical cleaning
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), n-type wafers-Chemical etching
GaAs (100), Te-doped, n-type wafers-Chemical cleaning
GaAs (100), wafers, Si or Be doped wafers-Chemical cleaning
GaAs (110) wafers were cleaved under UHV-Vacuum cleaning
GaAs (110), (111), (100) wafers-Chemical polishing
GaAs (110), (111), and (211) wafers-Chemical etching
GaAs (111) and (100) wafers-Chemical etching
GaAs (111) and (100) wafers-Chemical etching
GaAs (111) and (100) wafers-Chemical polishing
GaAs (111) and (100) wafers-Chemical polishing
GaAs (111) as single crystal wafers and spheres-Chemical etching
GaAs (111) wafer-Chemical etching-51 etchant
GaAs (111) wafers and spheres-Chemical etching
GaAs (111) wafers and spheres-Chemical etching
GaAs (111) wafers and spheres-Chemical etching
GaAs (111) wafers and spheres-Chemical etching
GaAs (111) wafers and spheres-Chemical etching
GaAs (111) wafers and spheres-Chemical etching
GaAs (111) wafers and spheres-Chemical etching
GaAs (111) wafers and spheres-Chemical etching
GaAs (111) wafers and spheres-Chemical polishing
GaAs (111) wafers Cr, Te, and Zn doped-Chemical etching
GaAs (111) wafers fabricated as Esaki diodes-Chemical polishing
GaAs (111) wafers used as substrates for epitaxy growth of Ge and ZnSe-Chemical etching
GaAs (111) wafers used in a polarity etching study-Chemical etching
GaAs (111) wafers used in a polarity study of III-V compound semiconductors-Chemical etching
GaAs (111) wafers used in a polarity study-Chemical etching
GaAs (111) wafers used in a polarity study-Chemical etching
GaAs (111) wafers used in a polarity study-Chemical etching
GaAs (111) wafers used in an etch development study-Chemical etching
GaAs (111) wafers used in an etch development study-Chemical etching
GaAs (111) wafers used in an etch development study-Chemical etching
GaAs (111) wafers with (111 )Ga surface polished-Chemical polishing
GaAs (111) wafers with zinc diffusion-Chemical etching-A/B etchant
GaAs (111) wafers-Chemical cleaning
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching
GaAs (111) wafers-Chemical etching-Schell's reagent
GaAs (111) wafers-Chemical polishing
GaAs (111) wafers-Chemical polishing
GaAs (111) wafers-Chemical polishing
GaAs (111) wafers-Chemical polishing
GaAs (111) wafers-Chemical polishing
GaAs (111) wafers-Dislocation etching-RC-1 etchant
GaAs (111), (100) and (110) wafers-Dislocation etching
GaAs (111), (100), and (110) wafers-Chemical etching
GaAs (111), n-type, 5-30 Ohm cm resistivity wafers-Chemical etching
GaAs (111), n-type, 5-30 Ohm cm resistivity wafers-Chemical polishing
GaAs (111)A and (TTT)B wafers-Chemical polishing
GaAs (111)A wafer surfaces-Chemical etching
GaAs (111)A wafer-Chemical etching
GaAs (111)As, (100) and (110) oriented wafers-Chemical cleaning
GaAs (111)B and (100) both n-type and undoped wafers-Chemical etching
GaAs (1OO), n-type wafers-Chemical etching
GaAs and GaP (100) and (111)B high n-type wafers-Chemical polishing
GaAs and Si (100) wafers-Chemical etching
GaAs Grown as a (111) ingot-Chemical etching
GaAs wafers grown by orizontal Bridgman (HB) technique-Chemical etching
GaAs wafers of various orientations-Chemical polishing
GaAs wafers-Chemical etching
GaAs wafers-Chemical etching
GaAs wafers-Chemical etching
GaAs wafers-Chemical etching
GaAs wafers-Chemical etching
GaAs wafers-Chemical etching
GaAs wafers-Chemical etching
GaAs wafers-Chemical polishing
GaAs wafers-Chemical polishing
GaAs wafers-Electrolytic etching-SSA etchant
GaAs, (100) wafers-Chemical cleaning
GaAs:B (111) n-type wafers and (100) undoped wafers-Chemical etching
GaAs:Be (100) p-type wafers-Metal passivation
GaAs:Be (110) p-type wafers-Chemical cleaning
GaAs:Cr (100) (SI) or n+ diffused wafers-Chemical etching
GaAs:Cr (100) (SI) wafers used as substrates for GaAs growth by MBE-Chemical cleaning
GaAs:Cr (100) (SI) wafers used as substrates-Oxide removal
GaAs:Cr (100) (SI) wafers used in a study of surface cleaning-Chemical polishing/cleaning
GaAs:Cr (100) (SI) wafers-Chemical cleaning/etching
GaAs:Cr (100) (SI) wafers-Chemical cleaning
GaAs:Cr (100) (SI) wafers-Chemical cleaning
GaAs:Cr (100) (SI) wafers-Chemical cleaning
GaAs:Cr (100) (SI) wafers-Chemical cleaning
GaAs:Cr (100) (SI) wafers-Chemical etching/polishing
GaAs:Cr (100) (SI) wafers-Chemical etching
GaAs:Cr (100) (SI) wafers-Chemical etching
GaAs:Cr (100) (SI) wafers-Chemical etching
GaAs:Cr (100) (SI) wafers-Chemical etching
GaAs:Cr (100) (SI) wafers-Chemical polishing/etching
GaAs:Cr (100) (SI) wafers-Chemical polishing
GaAs:Cr (100) (SI) wafers-Chemical polishing
GaAs:Cr (100) (SI) wafers-Chemical polishing
GaAs:Cr (100) (SI) wafers-Etch cleaning
GaAs:Cr (100) (SI) wafers-Oxidation/cleaning
GaAs:Cr (100) wafers within 1/2 degrees of plane-Chemical etching
GaAs:Cr (100) wafers-Chemical cleaning
GaAs:CR (100)(SI) wafers-Chemical polishing/cleaning
GaAs:Cr (100), (111) (SI) and n-type Si doped wafers-Molten flux
GaAs:Cr, (100) (SI) and InP:Fe (100) (SI) wafers-Molten flux
GaAs:Cr, (100) (SI) wafers-Halogen, polish
GaAs:Te (100) n-type wafer substrates-Chemical cleaning
GaAs; Zn, (100) wafers cut 2-3-off plane toward (110)-Chemical polishing
GaAsP wafers as highly p-type doped with Mn-Dislocation etching
Ga-In-As phosphide-In a study of etching characteristics of InGaAsP/InP wafers
GaOxNy surface contamination of Gallium arsenide wafers-Chemical etching
GaP (100) and (111) wafers-Chemical polishing
GaP (100) and (111) wafers-Gas polishing
GaP (100) and (111)B, p-type, 0.2 Ohm cm resistivity wafers-Chemical polishing
GaP (100) n-type wafers-Chemical polishing
GaP (100) wafers-Chemical etching
GaP (100), (111)A and (111)B wafers-Chemical polishing
GaP (110) undoped wafers-Chemical polishing
GaP (111) and (100) wafers-Chemical polishing
GaP (111) and GaAs (111) wafers-Chemical polishing
GaP (111) and GaAs (111) wafers-Chemical polishing
GaP (111) and GaAs (111)A wafers-Chemical polishing
GaP (111) wafer-Chemical polishing
GaP (111) wafers zinc diffused-Chemical etching
GaP (111) wafers-Chemical etching
GaP (111) wafers-Chemical etching
GaP (111) wafers-Chemical etching
GaP (111) wafers-Chemical etching
GaP (111) wafers-Chemical etching-Aqua regia, modified
GaP (111) wafers-Metal decoration
GaP (111), (100), (110) wafers-Chemical polishing
GaP (111)B wafers-Chemical etching
GaS (100), n-type wafers-Chemical polishing
GaSb (100) both undoped and Te-doped wafers-Acid passivating
GaSb (100) both undoped and Te-doped wafers-Acid passivation
GaSb (100) undoped and Te-doped wafers-Chemical polishing
GaSb (100) undoped wafers-Chemical polishing
GaSb (100) undoped wafers-Chemical polishing
GaSb (100) undoped wafers-Chemical polishing
GaSb (100) undoped wafers-Chemical polishing
GaSb (100) wafers Te-doped-Chemical etching--A-B etchant
GaSb (100) wafers-Chemical etching
GaSb (100) wafers-Chemical polishing
GaSb (100) wafers-Chemical, oxide removal
GaSb (100), p-type wafers-Chemical etching
GaSb (111) and (100) wafers-Chemical etching
GaSb (111) and (100) wafers-Chemical etching
GaSb (111) and (100) wafers-Chemical etching
GaSb (111) and (100) wafers-Chemical etching
GaSb (111) and (100) wafers-Chemical etching
GaSb (111) and (100) wafers-Chemical polishing
GaSb (111) wafers-Chemical etching
GaSb (111) wafers-Chemical etching
GaSb (111) wafers-Chemical etching
GaSb (111) wafers-Chemical etching
GaSb (111) wafers-Chemical etching
GaSb (111) wafers-Chemical etching
GaSb (211) wafer-Chemical etching
GaSe (0001) wafers-Mechanical, dislocation
Gd3Ga5O12 (0001) wafers 3" in diameter-Ketone cleaning
Gd3Ga5O12 (110) wafers-Abrasive polishing
Gd3Ga5O12 (111) cut wafers-Chemical cleaning
Gd3Ga5O12 (111) wafers-Abrasive polishing
Gd3Se1.8Ga3.2O12 (0001) wafers-Chemical cleaning
Ge (100) and (110) wafers-Chemical etching
Ge (100) and (111) wafers-Metal etching
Ge (100) very thin films grown by PECVD on NaCl, Ge wafers-Thermal cleaning
Ge (100) wafers and other orientations-Chemical polishing/etching-Camp #4 (CP4) etchant
Ge (100) wafers cut within 1 of plane-Physical cleaning
Ge (100) wafers-Chemical etching-100 etchant
Ge (100) wafers-Chemical etching-Peroxide etchant (on germanium)
Ge (100) wafers-Vacuum cleaning
Ge (111) 5-10 Ohm cm resistivity n-type wafers-Chemical etching
Ge (111) and (100) wafers used as substrates-Chemical polishing
Ge (111) and (100) wafers-Chemical etching
Ge (111) and (100) wafers-Solution used as a preferential etch
Ge (111) and Si (111) wafers-Chemical polishing/etching-1:1:1 etchant
Ge (111) grown ingots with grown-in p-n junction-Electrolytic etching
Ge (111) n-type wafers-Chemical etching
Ge (111) n-type wafers-Electrolytic etching
Ge (111) n-type, 0.004-40 Ohm cm resistivity wafers-Electrolytic polishing
Ge (111) wafer and spherical shot-Chemical etching
Ge (111) wafer with p-n junctions-Electrolytic etching
Ge (111) wafers and cylinders-Metal diffusion
Ge (111) wafers and ingots-Chemical etching
Ge (111) wafers and other orientations-Chemical etching
Ge (111) wafers and other orientations-Chemical etching
Ge (111) wafers and other orientations-Chemical etching
Ge (111) wafers and other orientations-Electrolytic etching
Ge (111) wafers and other orientations-Gas oxidation
Ge (111) wafers angle lapped at 543'-Chemical etching
Ge (111) wafers fabricated as p-n junction diodes-Chemical etching
Ge (111) wafers fabricated with indium p-n junctions-Junction testing
Ge (111) wafers lithium diffused-Chemical etching
Ge (111) wafers p-type-Chemical polishing
Ge (111) wafers used as substrates for Ge epitaxy growth-Chemical etching
Ge (111) wafers with epitaxy grown Ge layers-Gas ecthing
Ge (111) wafers with indium-Metal decoration
Ge (111) wafers with lithium diffused p-n junctions-Chemical etching
Ge (111) wafers, p-type, 4 Ohm cm resistivity-Chemical polishing
Ge (111) wafers-Abrasive, damage
Ge (111) wafers-Acid, stress
Ge (111) wafers-Chemical cleaning
Ge (111) wafers-Chemical cleaning
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching
Ge (111) wafers-Chemical etching-Camp #2 (Superoxol, CP2) etchant
Ge (111) wafers-Chemical etching-Camp #3 (CP3) etchant
Ge (111) wafers-Chemical etching-WAg etchant
Ge (111) wafers-Chemical etching-White etchant
Ge (111) wafers-Chemical polishing/etching-SR4 etchant
Ge (111) wafers-Chemical polishing
Ge (111) wafers-Chemical polishing
Ge (111) wafers-Chemical polishing
Ge (111) wafers-Chemical polishing
Ge (111) wafers-Chemical polishing
Ge (111) wafers-Chemical polishing
Ge (111) wafers-Chemical polishing-BJ etchant
Ge (111) wafers-Chemical polishing-X-l114 etchant
Ge (111) wafers-Cleave
Ge (111) wafers-Electrolytic etching
Ge (111) wafers-Electrolytic etching
Ge (111) wafers-Electrolytic etching
Ge (111) wafers-Electrolytic etching
Ge (111) wafers-Electrolytic etching
Ge (111) wafers-Electrolytic plating
Ge (111) wafers-Electrolytic polishing
Ge (111) wafers-Electrolytic polishing
Ge (111) wafers-Electrolytic polishing
Ge (111) wafers-Electrolytic polishing
Ge (111) wafers-Electrolytic polishing
Ge (111) wafers-Electrolytic polishing
Ge (111) wafers-Junction testing
Ge (111) wafers-Metal, structure
Ge (111), (100), (110) and (211) wafers-Chemical etching
Ge (111), (100), (110) and (211) wafers-Chemical etching
Ge (111), (100), (110) and (211) wafers-Chemical etching
Ge (111), (100), (110), and (211) wafers-Chemical etching
Ge (111), (100), (110), and (211) wafers-Chemical etching
Ge (111), (100), (110), and (211) wafers-Chemical etching-CP4, dilute CP4, modified
Ge (111), (100), and (110) wafers-Chemical polishing
Ge (111), (110) and (100) wafers-Chemical etching
Ge (111), (110), (100), (211) wafers and single crystal spheres-Chemical etching
Ge (111), (110), (100), (211) wafers and single crystal spheres-Chemical etching
Ge (111), (110), and (211) wafers-Chemical etching
Ge (111), p- and n-type wafers-Electrolytic polishing
Ge and InP (100) and (111) wafers-Chemical thinning
Ge and Si wafers-Chemical etching
Ge and Si wafers-Chemical polishing
Ge and Si wafers-Electrolytic oxidation
Ge and Si wafers-Ionized gas cleaning
Ge as devices with evaporated metal contacts-Contact etching
Ge as polyerystalline spheres-Thermal forming
Ge ingot-Alkali, cutting
Ge n-type wafers-Chemical polishing
Ge specimens-Electrolytic etching
Ge thin films evaporated on Si, Al, Al2O3, GaAs, C substrate-Physical etching
Ge wafers doped with copper-Chemical polishing
Ge wafers of different orientations-Chemical cleaning
Ge wafers of different orientations-Dislocation etching
Ge wafers studied for neutron irradiation effects
Ge wafers used as substrates-Chemical polishing
Ge wafers-Chemical etching
Ge wafers-Chemical etching
Ge wafers-Chemical etching
Ge wafers-Chemical etching
Ge wafers-Chemical polishing/etching
Ge wafers-Chemical polishing
Ge wafers-Chemical thinning
Ge wafers-Metal, contamination
Ge2O3, DC sputtered thin films-Chemical etching
Ge3N4 and Ge3O(1-x)N(x)-Chemical etching
Ge3N4 and Ge3OxNy thin films-Chemical etching
Ge3N4 thin films-Gas densification
GeAs (111) wafer-Chemical etching
GeAs (111) wafers-Chemical etching
GeAs (111) wafers-Chemical etching
GeAs (111) wafers-Chemical etching
GeAs (111) wafers-Chemical etching
GeO2 thin films-Gas forming
Glass as microscope slides-Chemical cleaning
Glass, soda-lime blanks-Chemical cleaning
Glass-thin film deposition and growth-Chemical cleaning-AB etchant (RCA)
Hf single crystal wafers and HfN thin films-Chemical cleaning
Hf thin films deposited on silicon wafers-Chemical etching
HfN thin film-Chemical cleaning
Hg as a smeared surface contact-Ketone, freezing
Hg(1-x)Cd(x)Te (111) wafers-Chemical etching
Hg(1-x)Cd(x)Te single crystal-Chemical polishing
HgCdTe (111) wafers and other orientations-Chemical polishing
HgCdTe (111) wafers-Chemical polishing
HgCdTe single crystal ingots and wafers-Chemical etching
HgCdTe single crystal wafers-Chemical polishing
HgCdTe specimens-Chemical polishing
HgCdTe wafers-Chemical etching
HgSe (111) wafers-Chemical etching
HgSe (111) wafers-Chemical etching
HgSe (111) wafers-Chemical polishing
HgTe (111) wafers-Chemical etching
HgTe (111) wafers-Dislocation etching
HgTe single crystal wafers-Chemical polishing
Hydrochloric acid (HCl)-Gas cleaning
In (100) wafers-Chemical etching
In as pellets-Chemical cleaning
In preform sheet alloyed on germanium (111) wafer-Chemical etching
In5Bi3 single crystal specimens-Chemical polishing
InAs (100) n-type wafers-Chemical polishing
InAs (100), n-type wafers-Chemical etching
InAs (110), n-type wafers-Chemical polishing
InAs (111) wafers and other orientations-Thermal processing
InAs (111) wafers used in a polarity study-Chemical etching
InAs (111) wafers used in X-ray studies-Chemical etching
InAs (111) wafers-Chemical etching
InAs (111) wafers-Chemical etching
InAs (111) wafers-Chemical etching
InAs (111) wafers-Chemical etching
InAs (111) wafers-Chemical etching
InAs (111) wafers-Chemical etching
InAs (111) wafers-Dislocation etching
InAs (111), (110) and (100) wafers-Chemical etching
InAs specimens-Chemical etching
InAs(x)P(x-1) polycrystalline ingot-Chemical polishing
Indium phosphide (InP)-Chemical etching
InGaAs (001) thin film-Chemical etching
InGaAs (100) wafer-Chemical cleaning
InGe used as a deposited Au/InGe alloy contact on (100) InP and GaAs wafers-Chemical etching
InP (100) cleaved wafers-Chemical etching
InP (100) n-type wafers-Chemical cleaning
InP (100) n-type wafers-Chemical etching
InP (100) n-type wafers-Chemical etching
InP (100) n-type wafers-Chemical etching
InP (100) n-type wafers-Chemical native oxide removal
InP (100) n-type wafers-Chemical polishing
InP (100) n-type wafers-Chemical polishing
InP (100) p-type wafers-Chemical etching
InP (100) Sn doped wafers-Chemical etching
InP (100) tin-doped, n-type wafer-Chemical etching
InP (100) wafer fabricated as Schottky diodes-Chemical polishing
InP (100) wafer substrates-Halogen, grooving
InP (100) wafer used as a substrate-Acid oxidation
InP (100) wafer-Chemical etching
InP (100) wafer-Chemical etching
InP (100) wafers Cut 3-off toward (110)-Chemical polishing
InP (100) wafers cut within 1 of plane-Chemical polishing
InP (100) wafers fabricated as Schottky diodes-Junction stain
InP (100) wafers used as substrates for InP epitaxy-Chemical etching
InP (100) wafers used as substrates for LPE deposition of InGaAsP-Chemical etching
InP (100) wafers used as substrates for LPE of InGaAsP-Chemical etching
InP (100) wafers used as substrates-Chemical etching
InP (100) wafers used for epitaxy growth of InGaAs/InGaAsP-Metal, etch-back
InP (100) wafers used for zinc deposition and anneal-Chemical thinning
InP (100) wafers used in a dislocation study-Dislocation etching
InP (100) wafers with channels in (011) and (011) directions-Chemical etching
InP (100) wafers with or without thin film InGaAsP epitaxy-Chemical etching
InP (100) wafers, S doped n-type-Ionized gas cleaning
InP (100) wafers, Zn doped p-type-Chemical etching
InP (100) wafers-Acid, stain
InP (100) wafers-Chemical cleaning
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching
InP (100) wafers-Chemical etching-BCK-111 etchant
InP (100) wafers-Chemical etching-BPK-221 etchant
InP (100) wafers-Chemical polishing/etching
InP (100) wafers-Chemical polishing
InP (100) wafers-Chemical polishing
InP (100) wafers-Chemical polishing
InP (100) wafers-Chemical thinning
InP (100) wafers-Electrolytic etching
InP (100) wafers-Electrolytic etching
InP (100) wafers-Electrolytic oxidizing
InP (100) wafers-Ionized gas, removal
InP (100) wafers-Ionized gas
InP (100) wafers-Physical etrching
InP (100) wafers-Thermal cleaning
InP (100) Zn doped p-type wafers-Chemical etching
InP (100) Zn doped p-type wafers-Chemical polishing
InP (100), n-type, 0.3-0.4 Ohm cm resistivity, and p-type, 7-8 Ohm cm wafers-Chemical cleaning
InP (110) wafer cleaved under UHV-Chemical polishing
InP (111) wafers grown by LEC-Chemical etching
InP (111) wafers grown by LEC-Chemical polishing
InP (111) wafers-Chemical etching
InP (111) wafers-Chemical etching
InP (111) wafers-Chemical etching
InP (111) wafers-Chemical etching
InP (111) wafers-Chemical polishing
InP (111)A and (100) wafers-Chemical etching
InP (TTT)B wafers-Chemical etching
InP p-type single crystal wafers-Chemical polishing
InP:Fe (100) (SI) wafers-Chemical etching
InP:Fe (100) (SI) wafers-Chemical etching
InP:Fe (100) (SI) wafers-Chemical etching
InP:Fe (100) (SI) wafers-Chemical polishing
InP:Fe (100) n-type wafers-InP:Fe (100) n-type wafers
InP:Fe (100) wafers used as substrates for MISFETT and EMISFET device fabrication-Chemical etching
InP:Fe (100) wafers within 5 of plane-Chemical etching
InP:Fe (100) wafers-Chemical cleaning
InP-Fe (100) (SI) wafers-Chemical polishing
InP-Fe (100) wafers-Chemical cleaning
InS (100) and (110) wafers-Chemical polishing
InSb (001) wafers-Alcohol cleaning
InSb (100) and (110) wafers-Chemical etching-Etchant #1
InSb (100) and (110) wafers-Chemical etching-Etchant #2
InSb (100) n-type wafers used in a study of adsorption coefficients
InSb (100) n-type wafers zinc diffused-Chemical cleaning
InSb (100) n-type wafers-Chemical etching
InSb (100) wafers and other orientations-Chemical polishing
InSb (100) wafers-Chemical etching
InSb (100) wafers-Chemical polishing
InSb (100) wafers-Chemical polishing
InSb (100) wafers-Chemical polishing
InSb (100) wafers-Chemical polishing
InSb (100) wafers-Ionized gas cleaning
InSb (100) wafers-Oxide removal
InSb (100), (111)A and (111)B oriented wafers-Chemical etching
InSb (110) n-type and (100) p-type wafers-Chemical polishing
InSb (111) p-type wafers-Chemical polishing
InSb (111) wafers and other orientation-Chemical polishing-CP4, variety CP4A etchant
InSb (111) wafers-Chemical etching/polishing
Insb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching
InSb (111) wafers-Chemical etching-H100 etchant
InSb (111) wafers-Chemical polishing
InSb (111) wafers-Chemical polishing
InSb (111) wafers-Chemical polishing
InSb (111) wafers-Chemical polishing
InSb (111) wafers-Chemical polishing
InSb (111) wafers-Chemical polishing
InSb (111) wafers-Chemical polishing
InSb (111) wafers-Chemical polishing
InSb (111) wafers-Chemical polishing
InSb (111) wafers-Chemical polishing-Allen's etchant
InSb (111) wafers-Electrolytic anodization
InSb (111) wafers-Electrolytic anodizing
InSb (111) wafers-Ketone cleaning
InSb (111) wafers-Thermal etching
InSb (111), (112) and other bulk orientations-Chemical polishing
InSb (111)A, (TTT)B and (100) wafers-Chemical cleaning
InSb (311) and (110) wafers-Electrolytic polishing
InSb (311) wafers-Chemical etching
InSb (311) wafers-Chemical polishing
InSb-Te (111) n-type wafers-Chemical cleaning
InSe (0001) as hand cleaved wafers-Chemical etching
Ir crystalline specimens as wire, rod, sheet-Chemical etching
Ir thin films deposited on silicon (100), n-type-Chemical etching
IrV and Ir80V20 thin films-Chemical etching
KBr (001) wafers-Chemical etching
KBr (100) cleaved wafers-Chemical etching
KBr (100) wafers and single crystals-Water polishing
KCl (001) cleaved wafers-Chemical etching
KCl (100) cleaved wafers-Chemical etching
KCl (100) cleaved wafers-Chemical polishing
KCl (100) cleaved wafers-Gas etching
KCl (100) wafers-Alcohol cleaning
KCl (100) wafers-Chemical etching
KCl (111) and (100) cleaved wafers-Chemical cleaning
KI (100) cleaved wafers-Chemical etching
KI (100) cleaved wafers-Chemical etching
KI (100) wafers-Alcohol polishing
KI (100) wafers-Chemical etching
Krumm's etchant
KTaO3 iron doped single crystal wafer-Abrasive polishing
LaBr3 (100) wafers-Chemical polishing
LaSrCoO3 single crystals-Chemical etching
LaSrFeO3 single crystals-Chemical etching
Li powder in oil-Diffision
LiBr (100) cleaved wafers-Chemical etching
LiCl cleaved wafers-Chemical etching
LiCl wafers-Dislocation etching
LiF (100) and (111) wafers-Chemical etching
LiF (100) cleaved wafers-Dislocation etching
LiF (100) wafers-Chemical etching
LiF (100) wafers-Chemical etching
LiF (100) wafers-Chemical etching
LiF (100) wafers-Chemical etching-W" etchant
LiF (10O) cleaved wafers-Dislocation etching
LiF (111) cleaved wafers-Ulrasonic vibration
LiInS2 (001) oriented thin films-Chemical etching
LiInS2 thin films on (111) silicon wafer substrates-Chemical etching
LiTaO3 single crystal wafers-Metal decoration
Magnesium bronze-Chemical etching
Mg (0001) wafers-Electrolytic polishing/etching
Mg single crystal wafers-Chemical etching
Mg single crystal wafers-Electrolytic polishing
Mg specimens and alloys-Acid cutting
Mg2G3 (111) wafers-Chemical polishing
Mg2Ge (111) cleaved wafers-Chemical etching
Mg2Ge (111) cleaved wafers-Cleave, cleaning
Mg2Ge (111) wafers-Chemical cleaning
Mg2Ge (111) wafers-Chemical cleaning
Mg2Ge (111) wafers-Chemical polishing
Mg2Si (111) cleaved wafers-Chemical etching
Mg2Sn (100) cleaved wafers
Mg2Sn single crystal specimens
MgAl2O4 (spinel) (100) and (111) wafers-Chemical polishing
MgAl2O4 (spinel) (111) wafers-Chemical cleaning
MgAl2O4 (spinel) natural crystals-Molten flux decomposition
MgF2 (100) wafers-Chemical polishing/etching
MgO (100) cleaved wafers-Chemical etching
MgO (100) cleaved wafers-Chemical etching
MgO (100) wafers-Chemical cleaning
MgO (100) wafers-Chemical cleaning
MgO (100) wafers-Chemical etching
MgO (100) wafers-Chemical polishing
MgO (100) wafers-Chemical thinning
MgO (100) wafers-Dislocation etching
MgO (100) wafers-Dislocation etching-Stoke's etchant
MgO (100) wafers-Metal decoration
Mn thin films-Chemical polishing/etching
Mo (111) wafers-Chemical cleaning
Mo (111) wafers-Chemical cleaning
Mo (111) wafers-Electrolytic polishing/thinning
Mo discs-Chemical cleaning-Moly's etchant
Mo pressed powder discs-Chemical etching
MoN and Mo2N thin films grown on (100) silicon wafers-Chemical etching
NaCl (100) cleaved wafers-Chemical etching
NaCl (100) cleaved wafers-Chemical polishing
NaCl (100) cleaved wafers-Chemical polishing
NaCl (100) cleaved wafers-Chemical polishing
NaCl (100) cleaved wafers-Dislocation etching
NaCl (100) cleaved wafers-Dislocation etching
NaCl (100) cleaved wafers-Dislocation etching
NaCl (100) cleaved wafers-Thermal etching
NaCl (100) cleaved wafers-Thermal, float-off
NaCl (100) wafers and single crystals-Chemical polishing
NaCl (100) wafers, NaCl single crystal whiskers-Chemical etching-Moran's etchant
NaCl (100) wafers
NaCl (100) wafers-Acid, float-off
NaCl (100) wafers-Chemical cleaning
NaCl (100) wafers-Chemical cleaning
NaCl (100) wafers-Chemical etching
NaCl (100) wafers-Chemical etching
NaCl (100) wafers-Chemical etching
NaCl (100) wafers-Chemical etching
NaCl (100) wafers-Chemical etching-Barber's etchant
NaCl (100) wafers-Chemical etching-Cook's etchant
NaCl (100) wafers-Chemical polishing
NaCl (100) wafers-Chemical polishing
NaCl (100) wafers-Dislocation etching
NaCl (100) wafers-Gas cleaning
NaCl (100) wafers-Metal decoration
NaKC4H4O6 x 4H2O (0001) wafers-Chemical cleaning
NaKC4H4O6 x 4H2O (0001) wafers-Chemical etching
Nb specimens-Electrolytic polishing
Nb3Sn amorphous thin films-Heat, removal
NbH deposited on silicon wafers-Chemical etching
n-Bi2Te3 (0001) wafers-Chemical etching
n-GaP (111) and p-GaP (111) wafers-Chemical etching
Ni (100) wafers-Chemical etching
Ni (100) wafers-Ionized gas cleaning
Ni-Cr as an evaporated thin film on (100) oriented Si wafers-Chemical etching
Ni-Cr evaporated thin films on (100) Si wafers-Chemical etching
Ni-Cr specimens-Electrolytic cutting
Ni-Cr thin films evaporated on (111) and (100) oriented Si-Chemical etching
NiCu (5%) to NiCu (80%) single crystal wafers-Chemical etching
NiO (100) cleaved wafers-Thermal etching
NiSi2 thin films deposited on silicon wafers-Chemical cleaning
NxSiO2 thin films-Chemical etching
P2O5 and other phosphorus compounds-Chemical etching
P2O5 powder-Chemical etching
Pb (100) wafers-Chemical cleaning
Pb (100) wafers-Chemical etching
Pb (100) wafers-Chemical polishing
Pb (100) wafers-Electrolytic polishing
p-Bi2Te3 (0001) cleaved wafers-Oxidation
PbS (100) cleaved wafers-Chemical cleaning
PbS (100) wafers-Chemical polishing/etching
PbS (100) wafers-Chemical polishing
PbS (100) wafers-Dislocation etching
PbS (100) wafers-Electrolytic polishing
PbSe (100) cleaved wafers-Chemical cleaning
PbSe (100) wafers and other orientations-Chemical etching
PbSe (100) wafers and other orientations-Chemical polishing
PbSe (100) wafers and other orientations-Electrolytic polishing
PbSe (100) wafers-Eelectrolytic polishing/thinning
Pb-Sn alloy contacts on silicon diodes-Chemical cleaning
Pb-Sn alloys-Chemical etching
PbSnSe (100) wafers-Electrolytic polishing
PbSnTe (100) wafers-Chemical etching
PbSnTe (100) wafers-Chemical polishing/etching
PbSnTe (100) wafers-Chemical polishing
PbSnTe (100) wafers-Electrolytic polishing
PbTe (100) and PbSnTe (100) wafers-Electrolytic polishing
PbTe (100) cleaved wafers-Chemical etching
PbTe (100) p-type wafers-Oxide removal
PbTe (100) wafers-Chemical etching
PbTe (100) wafers-Chemical etching
PbTe (100) wafers-Chemical etching-Iodate etchant
PbTe (100) wafers-Chemical polishing
PbTe (100) wafers-Chemical polishing
PbTe (100) wafers-Dislocation etching
PbTe (100) wafers-Electrolytic polishing/etching
PbTe thin film-Acid float-off
Pd single crystals and thin films-Chemical etching
p-GaP (100) wafers-Chemical etching
p-GaSb (111) wafers-Chemical etching-BRM etchant
Poly-Si wafers-Defects
Pr (0001) wafers-Chemical polishing
Pt and Au evaporated on silicon (111)-Chemical etching
Pt2Si thin films formed on silicon, (111) and (100) n-type wafers-Metal deposition
PtSb2 (100) wafers-Chemical etching
PtSb2 (100), (110) and (111) wafers-Chemical etching
PtSb2 (100), (110) and (111) wafers-Chemical etching
PtSb2 (100), (110) and (111) wafers-Chemical etching
PtSb2 (100), (110) and (111) wafers-Chemical etching
PtSb2 (100), (110) and (111) wafers-Chemical etching
PtSb2 (100), (111) and (110) wafers-Chemical etching
PtSi thin films deposited on silicon-Ionized gas etching
RbBr (001) wafers-Chemical polishing
RbI (001) wafers-Chemical polishing
Re (0001) wafers-Chemical etching
Re (0001) wafers-Electrolytic polishing
Re (0001) wafers-Electrolytic thinning
Ru (100) wafers-Ionized gas cleaning
S (001) wafers-Chemical etching
S (100) wafers-Chemical etching
Sb (0001) wafers cleaved under LN2-Chemical polishing
Sb (0001) wafers cleaved under LN2-Chemical polishing
Sb (0001) wafers cleaved under LN2-Cleave
Sb (0001) wafers-Chemical etching
Sb single crystal wafers-Chemical polishing
Sc (0001) wafers-Chemical polishing
Sc (0001) wafers-Chemical polishing
Se deposits remaining on the (TTT)B surface of HgSe wafers-Chemical etching
Se single crystal wafers-Chemical etching
Se single crystal wafers-Chemical etching
Si (100) and (110) wafers-Chemical etching
Si (100) and (110) wafers-Dislocation etching-Chrome dislocation etchant
Si (100) and (111) wafers both n- and p-type-Chemical thinning
Si (100) and (111) wafers used in a study of carbon and oxygen contamination-Chemical etching
Si (100) and (111) wafers, n-type, 10-30 Ohm cm resistivity-Chemical etching
Si (100) and (111) wafers-Acid passivation
Si (100) and (111) wafers-Acid, float-off
Si (100) and GaAs (100) wafers-Chemical cleaning
Si (100) as-doped, 10 Ohm cm resistivity wafers-Chemical cleaning
Si (100) cleaved wafers-Chemical polishing
Si (100) n-type 3-6 Ohm cm resistivity wafers-Ionized gas etching
Si (100) n-type wafer used as substrate-Chemical etching
Si (100) n-type wafer-Chemical etching
Si (100) n-type wafers with a p+ Si epitaxy buffer layer-Chemical conditioning
Si (100) n-type wafers, 10 Ohm cm resistivity-Chemical etching
Si (100) n-type wafers-Colloid replication
Si (100) n-type, 2-5 Ohm cm resistivity wafers-Chemical etching
Si (100) p-type wafers with SiO2 films-Ionized gas etching
Si (100) p-type wafers, 1.2-1.8 Ohm cm resistivity-Chemical cleaning
Si (100) p-type wafers-Dislocation etching-Secco's etchant, modified
Si (100) p-type, 4-6 Ohm cm resistivity wafers-Chemical etching
Si (100) wafers 100 mm thick-Chemical etching
Si (100) wafers and other orientations-Abrasive polishing
Si (100) wafers and other orientations-Abrasive polishing
Si (100) wafers unpassivated surfaces or with SiO2 or TaSi2 thin films-Chemical cleaning
Si (100) wafers used as substrates for epitaxy growth-Chemical etching
Si (100) wafers used as substrates for epitaxy growth-Gas cleaning
Si (100) wafers used as substrates for RF sputter of SeGe thin films-Chemical etching
Si (100) wafers used as substrates in a study of oxide and nitride-Chemical etching
Si (100) wafers used as substrates with an SiO2 thin film-Physical etching
Si (100) wafers used as substrates with p-doped and undoped poly-Si and SiO2 thin films-Ionized gas etching
Si (100) wafers used as substrates-Chemical etching
Si (100) wafers used for MOCVD growth of SiO2 thin films-Chemical cleaning
Si (100) wafers used in an anisotropic etch study-Chemical etching
Si (100) wafers used in developing the Secco etch-Chemical polishing
Si (100) wafers with SiO2 thin films-Ionized gas etching
Si (100) wafers with thermal SiO2 thin films-Ionized gas etching
Si (100) wafers within +/-1 of the plane-Chemical etching-P-ED (EPW) etchant
Si (100) wafers, n-type, 10-30 Ohm cm resistivity-Chemical etching
Si (100) wafers, n-type-Chemical polishing/etching
Si (100) wafers, p-type, 2 Ohm cm resistivity-Chemical thinning
Si (100) wafers-Chemical cleaning
Si (100) wafers-Chemical cleaning
Si (100) wafers-Chemical cleaning
Si (100) wafers-Chemical etching
Si (100) wafers-Chemical etching
Si (100) wafers-Chemical etching
Si (100) wafers-Chemical jet thinning
Si (100) wafers-Chemical thinning
Si (100) wafers-Chemical thinning
Si (100) wafers-Ionized gas etching
Si (100) wafers-Ionized gas etching
Si (100) wafers-Physical etching
Si (100) wafers-Thermal oxidation
Si (100), (111), (110) and (112) wafers-Dash etchant, modified
Si (100), (111), p- and n-type, 0.2-20 Ohm cm resistivity wafers-Dislocation etching-Wright's etchant
Si (100), n- and p-type wafers, 20 and 25 Ohm cm resistivity-Chemical cleaning
Si (100), n-type, 3-6 Ohm cm resistivity wafers-Chemical etching
Si (100), n-type, 4-7 Ohm cm resistivity wafers-Chemical cleaning
Si (100), n-type, 5-9 Ohm cm resistivity wafers-Chemical cleaning
Si (100), n-type, 5-9 Ohm cm resistivity wafers-Chemical cleaning
Si (100), p- and n-type wafers, 1-10 Ohm cm resistivity-Chemical etching
Si (100), p-type, 2 Ohm cm resistivity wafers-Chemical cleaning
Si (100), p-type, 2 Ohm cm resistivity wafers-Chemical etching-BHF etchant
Si (110) wafers with a thermally grown SiO2 thin film-Chemical etching
Si (110), (112), and (113) wafers for p-p+ epitaxy-Chemical cleaning
Si (111) 10-20 Ohm cm resistivity, n-type wafers-Chemical etching
Si (111) and (100) n- and p-type wafers-Chemical jet polishing
Si (111) and (100) wafers and ingots-Alkali, orientation
Si (111) and (100) wafers and spheres-Chemical etching
Si (111) and (100) wafers used as substrates for silicon epitaxy growth-Chemical etching-Schimmel's etchant
Si (111) and (100) wafers used as substrates for silicon MBE thin film epitaxy growth-Chemical etching
Si (111) and (100) wafers used in a study of defects-Powder, defect ehnancement
Si (111) and (100) wafers, both n- and p-type-Electrolytic etching
Si (111) and (100) wafers, n-type 10-30 Ohm cm resistivity-Chemical etching
Si (111) and (100) wafers, n-type, 10-30 Ohm cm resistivity-Chemical etching
Si (111) and (100) wafers, p- and n-type of varied resistivity-Electrolytic oxidation
Si (111) and (100) wafers, p- and n-type, 0.2-20 Ohm cm resistivity-Chemical cleaning
Si (111) and (100) wafers-Chemical cleaning
Si (111) and (100) wafers-Chemical cleaning
Si (111) and (100) wafers-Chemical etching
Si (111) and (100) wafers-Electrolytic oxidation
Si (111) and (100), p-type 1 - 10 Ohm cm and n-type wafers-Chemical etching
Si (111) and (100), p-type, 1-10,000 Ohm cm resistivity wafers-Chemical etching-Secco's etchant
Si (111) and (110) wafers cut from CZ grown ingots-Chemical etching
Si (111) and (110) wafers-Chemical etching
Si (111) and other oriented wafers-Dislocation etching-Vogel's etchant
Si (111) n- and p-type wafers-Chemical cleaning
Si (111) n-type 3-5 Ohm cm resistivily wafers-Chemical etching
Si (111) n-type wafers 5 Ohm cm resistivity-Thermal cleaning
Si (111) n-type wafers and p-doped with 60Co-Chemical etching
Si (111) n-type wafers with boron diffused p-n junctions-Chemical etching
Si (111) n-type wafers with diffused p-type layers-Chemical etching
Si (111) n-type wafers with p-n junctions-Chemical junction etching
Si (111) n-type wafers, 1.63 Ohm cm resistivity-Chemical cleaning
Si (111) n-type wafers, 130 Ohm cm resistivity-Chemical polishing
Si (111) n-type wafers, 15-20 Ohm cm resistivity-Chemical etching
Si (111) n-type wafers, 50-500 Ohm cm resistivity-Chemical polishing
Si (111) n-type wafers, 5-120 Ohm cm resistivity-Acid forming
Si (111) n-type wafers, 5-120 Ohm cm resistivity-Dislocation etching
Si (111) n-type wafers, 5-50 Ohm cm resistivity-Acid forming
Si (111) n-type wafers-Acid, junction etcthing-Healy's junction etchant
Si (111) n-type wafers-Chemical polishing
Si (111) n-type wafers-Electrolytic jet polishing
Si (111) n-type wafers-Electrolytic jet polishing
Si (111) n-type wafers-Electrolytic jet polishing
Si (111) n-type, 1.5-2.5 Ohm cm resistivity wafers-Chemical etching
Si (111) p- and n-type wafers, 8 Ohm cm resistivity-Chemical etching
Si (111) p- and n-type, 20 and 25 Ohm cm resistivity wafers-Chemical cleaning
Si (111) p-type 2-10 Ohm cm resistivity wafers-Gas oxidation
Si (111) p-type wafers used for diffusion of antimony from glass-Chemical cleaning
Si (111) p-type wafers, 7-21 Ohm cm resistivity-Chemical cleaning
Si (111) p-type wafers-Chemical cleaning
Si (111) wafer and other orientations-Chemical etching
Si (111) wafer substrates used for epitaxy growth of GaP-Chemical cleaning
Si (111) wafers and other orientation-Chemical etching-Silver glycol etchant
Si (111) wafers and other orientations with n- and p-type resistivity-Chemical polishing
Si (111) wafers and other orientations, both n- and p-type of different resistivity levels-Dash etchant
Si (111) wafers and other orientations-Abrasive polishing
Si (111) wafers and other orientations-Chemical cleaning
Si (111) wafers and other orientations-Chemical ecthing
Si (111) wafers and other orientations-Chemical etching
Si (111) wafers and other orientations-Chemical etching
Si (111) wafers and other orientations-Chemical etching
Si (111) wafers and other orientations-Chemical etching-Copper etchant
Si (111) wafers and other orientations-Chemical etching-Landyren's etchant
Si (111) wafers and other orientations-Chemical etching-Sirtl's etchant
Si (111) wafers and other orientations-Chemical etching-Sopori's etchant
Si (111) wafers and other orientations-Chemical polishing/etching
Si (111) wafers and other orientations-Chemical polishing/thinning
Si (111) wafers and other orientations-Chemical polishing
Si (111) wafers and other orientations-Chemical polishing
Si (111) wafers and other orientations-Chemical polishing-CP4A etchant
Si (111) wafers and other orientations-Si (111) wafers and other orientations
Si (111) wafers and whiskers-Gas etching
Si (111) wafers both p- and n-type-Electrolytic polishing
Si (111) wafers fabricated as barrier diodes-Chemical etching
Si (111) wafers used as substrate for deposition of a-C-Chemical cleaning
Si (111) wafers used as substrates for epitaxy growth of silicon-Chemical polishing
Si (111) wafers used as substrates for epitaxy growth of silicon-Chemical thinning
Si (111) wafers used in a defect study-Chemical etching
Si (111) wafers used in a defect study-Chemical etching
Si (111) wafers used in a defect study-Electrolytic etching/polishing
Si (111) wafers used in a study of Ag and Fe ion contamination-Chemical polishing
Si (111) wafers used in a study of electro polishing with HF-Electrolytic polishing
Si (111) wafers used in a study of ion bombardment cleaning-Chemical polishing-Caro's etchant, modified
Si (111) wafers used in a study of light induced plasticity-Chemical etching
Si (111) wafers used in a study of selenium adsorption-Chemical cleaning
Si (111) wafers used in a study of stacking fault energy-Chemical thinning
Si (111) wafers used in a study of the variations in surface conductivity of silicon and germanium-Chemical polishing
Si (111) wafers with diffused n-p-n junctions-Electrolytic junction etching
Si (111) wafers with high boron doping-Chemical cleaning
Si (111) wafers with n+/n diffusion-Chemical etching
Si (111) wafers with p-n junctions-Chemical junction etching
Si (111) wafers, 5-50 Ohm cm resistivity, n-type-Chemical polishing
Si (111) wafers, boron diffused p-type-Chemical ecthing
Si (111) wafers, boron doped-Chemical etching-Iodine etchant
Si (111) wafers, n- and p-type-Chemical thinning
Si (111) wafers, n-type, 130 Ohm cm resistivity-Chemical sphere polishing
Si (111) wafers, n-type, 5-10 Ohm cm resistivity-Chemical polishing
Si (111) wafers, n-type, used to fabricate diffused p-n-p transistors-Chemical polishing
Si (111) wafers, p- and n-type-Chemical etching
Si (111) wafers, p-type, 7-21 Ohm cm resistivity-Chemical jet thinning
Si (111) wafers, p-type-Chemical etching
Si (111) wafers
Si (111) wafers-Abrasive polishing
Si (111) wafers-Acid, pinhole, jet
Si (111) wafers-Chemical cleaning
Si (111) wafers-Chemical cleaning
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching
Si (111) wafers-Chemical etching-Camp #8 (CP8) etchant
Si (111) wafers-Chemical polishing/thinning
Si (111) wafers-Chemical polishing
Si (111) wafers-Chemical polishing
Si (111) wafers-Chemical polishing
Si (111) wafers-Chemical polishing
Si (111) wafers-Chemical polishing
Si (111) wafers-Dislocation etching
Si (111) wafers-Dislocation etching-Erhard's etchant
Si (111) wafers-Dislocation etching-Silver etchant (for silicon)
Si (111) wafers-Gas etching
Si (111) wafers-Metal decoration
Si (111) wafers-Metal difusion-Dash copper decoration etchant
Si (111) wafers-Metal, dislocation
Si (111) wafers-Physical etching
Si (111), (100) and (110) wafers and a 1 cm diameter sphere-Chemical etching
Si (111), (100) and (110) wafers, n-type 0.1-0.7 Ohm cm and p-type 0.4-3 Ohm cm resistivity-Ionized gas thinning
Si (111), (100) and (110) wafers-Chemical polishing
Si (111), (100) and (110) wafers-Thermal etching
Si (111), (100) wafers as substrates for deposition of Si3N4-Chemical etching
Si (111), (100) wafers n-type 10-30 Ohm cm resistivity-Chemical etching
Si (111), (100) wafers-Chemical polishing/thinning
Si (111), (100), (112) and (110) oriented wafers-Chemical polishing
Si (111), (100), and (110) wafers and ingots-Chemical etching
Si (111), (100), n- and p-type wafers-Chemical polishing
Si (111), (110) and (211) wafers, ingots-Chemical etching-Sirtl's etchant, modified
Si (111), n-type and (110), p-type wafers-Chemical etching
Si (111), n-type, 10-15 Ohm cm resistivity wafers-Chemical polishing
Si (111), n-type, 1-10 Ohm cm resistivity wafers-Chemical etching
Si (111), n-type, 3-5 Ohm cm resistivity wafers-Chemical cleaning
Si (111), p- and n-type wafers-Chemical etching
Si (111), p-type (intrinsic) and doped (extrinsic) wafers-Chemical cleaning
Si (111), p-type wafers used as substrates for tungsten deposition-Chemical cleaning
Si (111), p-type wafers, 0.1-200 Ohm cm resistivity-Chemical polishing
Si and Ge (111) wafers and other orientations-Chemical polishing
Si and Ge wafers-Chemical polishing
Si and Ge wafers-Electrolytic cleaning
Si and SiO(x)N(y) DC sputtered thin films on (111) silicon wafers-Chemical etching
Si as poly-Si thin film on silicon wafers-Ionizde gas structuring
Si as poly-Si thin films-Chemical etching
Si as various cut shaped specimens-Chemical etching
Si ingot FZ grown, n-type, 200 Ohm cm resistivity-Dislocation etching
Si n- and p-type wafers-Electrolytic polishing
Si p-n junction wafers-Chemical etching
Si poly-Si epitaxy deposited thin films-Chemical cleaning
Si p-type wafers-Chemical etching
Si p-type wafers-Electrolytic polishing
Si single crystal spheres-Chemical etching
Si single crystal spheres-Chemical polishing
Si single crystal wafers of different orientations-Chemical etching-Copper dislocation etchant
Si single crystal wafers-Chemical etching
Si single-crystal or poly-crystalline wafer-Chemical etching
Si thin film epitaxy grown on (100) silicon wafer substrates-Chemical cleaning
Si wafers and other orientations-Chemical polishing
Si wafers both float zone ingot material and epitaxy thin film deposit-Chemical cleaning-Chrome regia etchant
Si wafers containing alloyed or diffused junctions-Chemical etching-Gold etchant for silicon
Si wafers of all major plane orientations-Chemical cleaning
Si wafers of different orientations-Chemical etching
Si wafers of different orientations-Electrolytic polishing
Si wafers of various orientations-Chemical etching
Si wafers of various orientations-Ionized gas etching
Si wafers used as substrates for growth of silicides-Ionized gas etching
Si wafers used as substrates for silicon epitaxy as Si/Si-Gas contamination
Si wafers with p-n junctions-Chemical etching
Si wafers with p-n junctions-Chemical junction etching
Si wafers-Chemical cleaning
Si wafers-Chemical cleaning
Si wafers-Chemical etching
Si wafers-Chemical etching
Si wafers-Chemical etching
Si wafers-Chemical etching
Si wafers-Chemical polishing
Si wafers-Electrolytic polishing
Si wafers-Electrolytic polishing
Si wafers-Gas etching
Si wafers-Ionized gas, structure
Si wafers-Surface treatment
Si wafers-Surface treatment
Si wafers-Surface treatment
Si(100) wafers-Ionized gas etching
Si3N4 amorphous thin films-Chemical ecthing
Si3N4 and oxynitrides as DC sputtered thin film deposits on (111) silicon, n-type, 5-10 Ohm cm resistivity wafers-Chemical etching
Si3N4 and oxynitrides deposits on (111) silicon-Chemical etching
Si3N4 and oxynitrides grown as thin films by DC sputtering on (111) silicon wafers-Chemical etching
Si3N4 oxynitrides and SiO2 DC/RF sputtered thin films-Chemical cleaning
Si3N4 oxynitrides and SiO2 thin films-Chemical cleaning
Si3N4 thin film amorphous deposits on silicon wafer substrates-Chemical etching
Si3N4 thin film amorphous deposits-Chemical etching
Si3N4 thin films deposited on (100) silicon wafers-Chemical cleaning
Si3N4 thin films RF plasma grown on silicon-Chemical etching
Si3N4 thin films-Chemical cleaning
Si3N4 thin films-Chemical etching
Si3N4, oxynitrides and SiO2 thin films-Chemical cleaning
SiC (0001) wafers-Chemical polishing
SiC (0001) wafers-Dislocation etching
SiC (0001) wafers-Gas polishing
SiC (0001) wafers-Molten flux etching
SiC (111) wafers-Molten flux etching
SiC n-type wafers doped with aluminum-Metal doping
SiC thin films grown on Si (100) wafers-Gas doping
SiC thin films vapor deposited on silicon wafers-Moletn flux etching
SiC thin films-Electrolytic etching
Si-Ge single crystal ingots-Chemical etching
Silicon oxide wafer etch process
SiN(x) and SiO2 thin films-Ionized gas etching
SiO2 (0001), (1010), natural single crystal and artificial fused quartz wafers and blank-Chemical etching
SiO2 as a residual PSG surface film-Chemical etching
SiO2 as thermal oxidation on silicon wafers-Chemical etching
SiO2 deposited on silicon wafer substrates
SiO2 deposition on aluminum and quartz blanks or silicon wafers-Chemical etching
SiO2 fused quartz epitaxy tubes-Chemical cleaning
SiO2 fused quartz tubes-Chemical cleaning
SiO2 fused quartz tubes-Chemical cleaning
SiO2 fused quartz tubes-Solvent cleaning
SiO2 grown as a hydrated oxide on silicon wafers-Acid oxidation
SiO2 grown as a hydrated oxide on silicon wafers-Acid oxidation
SiO2 grown as a hydrated oxide on silicon wafers-Acid oxidation
SiO2 grown as a hydrated oxide on silicon wafers-Electrolytic oxidizing
SiO2 single crystal blanks-Chemical cleaning
SiO2 thermally oxidized thin films on p-type (100) silicon wafers-Metal decoration
SiO2 thin film coatings-Oxide, growth
SiO2 thin film deposited on InP (100) wafer substrates-Chemical etching
SiO2 thin film deposits on silicon wafer-Chemical etching
SiO2 thin film layers grown on silicon-Chemical etching
SiO2 thin film oxidation of silicon, (111) n-type wafers at 1050C as wet oxide, 2000-2500 A thick-Chemical etching
SiO2 thin films and native oxides-Chemical etching
SiO2 thin films deposited by Silox system method on (100) silicon and GaAs-Cr (SI) wafers-Ionized gas etching-DE-100 etchant
SiO2 thin films deposited in etched grooves of (100) silicon wafers-Chemical etching
SiO2 thin films deposited on (100) silicon wafers-Chemical ecthing-Pliskin's etchant
SiO2 thin films deposited on (100) silicon wafers-Chemical etching
SiO2 thin films deposited on (100) silicon wafers-Chemical etching-P etchant
SiO2 thin films deposited on (100) silicon wafers-Ionized gas etching
SiO2 thin films deposited on (100) silicon wafers-Metal decoration
SiO2 thin films deposited on (111), p-type, 1-3 Ohm cm resistivity wafers-Chemical ecthing
SiO2 thin films deposited on (1OO) silicon wafers-Chemical etching
SiO2 thin films deposited on silicon (100)-Chemical etching
SiO2 thin films deposited on silicon wafers
SiO2 thin films deposited on silicon wafers-Chemical etching
SiO2 thin films deposited on silicon wafers-Chemical etching
SiO2 thin films deposition on (100) silicon wafers-Oxide, growth
SiO2 thin films grown on (100) silicon wafers-Ionized gas etching
SiO2 thin films grown on silicon, (100), n-type substrates-Chemical etching
SiO2 thin films on Si (100) wafers-Chemical etching
SiO2 thin films on Si (100) wafers-Chemical etching
SiO2 thin films on silicon wafers as doped BPSG
SiO2 thin films RF sputter deposited in argon on (100) oriented silicon wafers-Chemical etching
SiO2 thin films RF sputtered 200-700 nm thick on (100) silicon wafers-Chemical etching
SiSn thin films deposited on (100) silicon wafers-Chemical etching
SmBr3 (0001) wafers-Alcohol polishing
Sn (001) and (111) wafers-Electrolytic polishing
Sn (010) wafers-Chemical etching
Sn single crystal ingots-Electrolytic sawing
Sn specimen, 1/4" wafer in diameter-Acid, cutting
Sn white-tin single crystal-Chemical polishing
SnO2 thin films deposited on 1 mm glass slides-Chemical etching
SnO2 thin films deposited on SiO2 coated silicon wafer-Electrolytic etching
SnTe (100) wafers-Chemical polishing
Sr (100) wafers and other orientations-Chemical polishing/etching
SrCl2 (100) wafers-Vacuum cleaning
SrF2 and Ba(x)Sr(1-x)F2 thin films and SrF2 (100) wafers-Chemical etching
SrGa12O19 (0001) cleaved wafers-Chemical etching
SrGa12O19 single crystals-Chemical etching
Ta (100) wafers-Chemical etching
Ta (111) and (100) wafers-Chemical etching
Ta as high purity slugs-Chemical cleaning
Ta material-Chemical polishing
Ta thin films converted to Ta2O5 and TaN-Chemical etching
Ta2O5 thin films-Gas, stabilizing
TaH powder-Chemical etching
TaH thin films grown on (100)-Electrolytic etching
TaSi2 thin films deposited on silicon (100)-Chemical cleaning
TaSi2 thin films deposited on silicon-Ionized gas etching
TaSi2 thin films-Chemical etching
Te (0001) and (1010) wafers-Chemical polishing
Te (0001) and (1010) wafers-Oxide removal
Te (0001) and (1010) wafers-Te (0001) and (1010) wafers
Te (0001) and (12T0) wafers-Chemical cleaning
Te (0001) and other wafer orientations-Chemical etching
Te (0001) cleaved wafers-Chemical etching
Te (0001) wafers-Chemical polishing
Te (0001) wafers-Chemical polishing
Te (0001) wafers-Sawing
Te (1010) wafers-Chemical polishing
Te (1010) wafers-Dislocation etching
Te (10T0) cleaved wafers-Chemical polishing/etching
Te (10T0) wafers-Chemical etching
TeO2 grown as a stable native oxide on CdTe (110) wafers-Chemical etching
ThO2 (111) wafers-Chemical etching
Ti0.3W0.7Si2 thin films-Chemical polishing
Ti3W7Si2 thin films on silicon wafers, (111), (110) and (100)-Chemical etching
TiB2 and TiC single crystal wafers-Cleaning
TiC (001) cleaved wafers-Electrolytic etching
TiC (001) cleaved wafers-Polishing
TiC (100) wafers-Gas cleaning
TiN thin films deposited on (100) silicon wafers-Chemical etching
TiN thin films deposited on silicon wafers-Chemical etching
TiO2 (001) basal oriented wafers-Chemical cleaning
TiSi thin films grown on (100) silicon wafers-Chemical etching
TiSi2 thin film formed on silicon (100) substrates-Chemical etching
TiSi2 thin films deposited on silicon wafers-Ionized gas etching
TiW (1% Ti) thin films-Chemical etching
TiW thin films-Ionized gas etching
Tl (0001) wafers-Chemical cleaning
UC (001) wafers-Electrolytic jet thinning
UC single crystal wafers-Chemical etching
UN (001) wafers-Electrolytic jet thinning
US (001) wafers-Electrolytic jet thinning
V3Si (111) and (100) wafers-Chemical polishing
V3Si (111) wafers-Electrolytic polishing
V3Si (111), (100) wafers-Dislocation etching
VC (1OO) single crystal ingots-Electrolytic etching
VSi2 thin films
W (001) wafers and other orientations-Acid thinning
W (001) wafers and single crystals-Electrolytic polishing
W (001) wafers-Chemical etching
W (111) wafers as deposited thin film-Ionized gas etching
W single crystal wafers-Chemical etching
W specimens as wire, W single crystal wafers-Gas, forming
W thin films-Chemical etching
W thin films-Chemical etching
WRh (2%) and (6%), (100) wafers-Electrolytic polishing
WS2 single crystal specimens-Chemical polishing
WSi2 thin films
WSi2 thin films-Chemical etching
Y2(CoM)17 single crystal ingots-Chemical polishing
Y3Al5O12 (YAG) (110) wafers-Chemical etching
Y3Fe5O12 (0001) (YIG) wafers-Chemical etching
Y3Fe5O12 (110) wafers-Chemical etching
Y3Fe5O12 (111) wafers-Chemical etching
Y5Fe5O12 (YIG) (0001) wafer
Zn (0001) Cleaved wafers
Zn (0001) single crystal wafers-Metal decoration
Zn (0001) wafers and cylinders-Chemical etching-P-2 etchant
Zn (0001) wafers and cylinders-Chemical etching-P-3 etchant
Zn (0001) wafers and ingots-Chemical polishing
Zn (0001) wafers-Acid cutting
Zn (0001) wafers-Chemical etching
Zn (0001) wafers-Chemical etching
Zn (0001) wafers-Chemical etching-E etchant
Zn (0001) wafers-Chemical etching-P-l etchant
Zn (0001) wafers-Chemical polishing/etching
Zn (0001) wafers-Zn (0001) wafers used in an etch pit study
Zn cylinder with (10T0) prism orientation-Chemical etching
Zn diffused into GaAs wafers-Chemical etching
Zn diffused into InSb, (100), n-type wafers-Chemical etching
Zn single crystal wafers-Zn single crystal wafers acid-saw cut using a braided SST wire and nitric acid
Zn single crystals-Chemical polishing
Zn wafers and single crystals-Zn (0001) cleaved wafers
ZnO (0001) and (10T0) wafers-Chemical etching
ZnO (0001) wafers from natural zincite-Chemical etching
ZnO (0O01) wafers-Chemical polishing
ZnO (1O1O) prism cut wafers-Chemical etching
ZnO single crystal material-Thermal treatment
ZnO single crystal wafers-Chemical etching
ZnS (0001) hexagonal wafers-Chemical cleaning
ZnS (001) wafers-Chemical etching
ZnS (100) wafers-Chemical polishing
ZnS (111) cleaved wafers-Chemical etching
ZnS (111) wafers-Chemical etching
ZnS (111) wafers-Chemical etching
ZnS (111) wafers-Dislocation etching
ZnS single crystal wafers-Chemical etching
ZnSe (100) wafers-Chemical etching
ZnSe (100) wafers-Chemical etching
ZnSe (100) wafers-Chemical polishing
ZnSe (110) wafers-Dislocation etching
ZnSe (111) (SI) wafers-Chemical cleaning
ZnSe (111) wafers-Chemical etching
ZnSe single crystal wafers-Chemical etching
ZnSe single crystal wafers-Chemical polishing
ZnSe-S (111) (SI) wafers and ZnSe single crystals-Chemical cleaning
ZnSiP2 (100) single crystal wafers-Chemical polishing
ZnTe (110) wafers and ingots-Dislocation etching
ZnTe (111) wafers-Chemical etching
ZnTe (111) wafers-Chemical etching
ZnTe (111) wafers-Chemical etching
ZnTe (111) wafers-Chemical etching-Warekois's reagent
ZnTe (111) wafers-Chemical polishing/etching
ZnTe (111) wafers-Chemical polishing
ZnTe (111) wafers-Dislocation etching
ZnTe (111) wafers-Thermal etching
ZnW (001) cleaved wafers-Chemical etching
ZnW (001) cleaved wafers-Chemical polishing
Zr (0001) and (1010) wafers-electrolytic polishing
ZrN (100) wafers--Thermal cleaning
ZrO2 single crystal specimen and ZrO2 thin film-Chemical etching

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